component
74HC03MT
Public Made by Adomby adom
HGSEMI Logic Gates, TSSOP-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
74HC03MT
HGSEMI · Logic Gates · TSSOP-14
74HC03MT from HGSEMI, in a TSSOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1A | input | Input channel 1, input A of the first NAND gate, which performs Y = A ● B in positive logic. |
| 2 | 1B | input | Input channel 1, input B of the first NAND gate, which performs Y = A ● B in positive logic. |
| 3 | 1Y | output | Output channel 1, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 4 | 2A | input | Input channel 2, input A of the second NAND gate, which performs Y = A ● B in positive logic. |
| 5 | 2B | input | Input channel 2, input B of the second NAND gate, which performs Y = A ● B in positive logic. |
| 6 | 2Y | output | Output channel 2, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 7 | GND | power_in | Ground reference for the device; the open-drain outputs sink current to this pin. |
| 8 | 3Y | output | Output channel 3, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 9 | 3A | input | Input channel 3, input A of the third NAND gate, which performs Y = A ● B in positive logic. |
| 10 | 3B | input | Input channel 3, input B of the third NAND gate, which performs Y = A ● B in positive logic. |
| 11 | 4Y | output | Output channel 4, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 12 | 4A | input | Input channel 4, input A of the fourth NAND gate, which performs Y = A ● B in positive logic. |
| 13 | 4B | input | Input channel 4, input B of the fourth NAND gate, which performs Y = A ● B in positive logic. |
| 14 | VCC | power_in | Positive supply; the recommended supply range is 2 V to 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HGSEMI |
| Package | TSSOP-14 |
| Category | Logic |
| Pins | 14 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | -0.5 | 7 | V | 3 | ||
| Input clamp current | IIK | -20 | 20 | mA | VI < 0 or VI > VCC | 3 | |
| Output clamp current | IOK | -20 | 20 | mA | VO < 0 or VO > VCC | 3 | |
| Continuous output current | IO | -25 | 25 | mA | VO = 0 to VCC | 3 | |
| Continuous current through VCC or GND | -50 | 50 | mA | 3 | |||
| Junction temperature | TJ | 150 | °C | 3 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Lead temperature | TL | 260 | °C | Soldering, 10 seconds | 3 | ||
| Supply voltage | VCC | 2 | 5 | 6 | V | 3 | |
| High-level input voltage | VIH | 1.5 | V | VCC = 2 V | 3 | ||
| High-level input voltage | VIH | 3.15 | V | VCC = 4.5 V | 3 | ||
| High-level input voltage | VIH | 4.2 | V | VCC = 6 V | 3 | ||
| Low-level input voltage | VIL | 0.5 | V | VCC = 2 V | 3 | ||
| Low-level input voltage | VIL | 1.35 | V | VCC = 4.5 V | 3 | ||
| Low-level input voltage | VIL | 1.8 | V | VCC = 6 V | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 1000 | ns | VCC = 2 V | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 500 | ns | VCC = 4.5 V | 3 | ||
| Input transition rise and fall rate | Δt/Δv | 400 | ns | VCC = 6 V | 3 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 3 | ||
| Output voltage IOH | IOH | 0.01 | 0.5 | µA | VI = VIH or VIL; VO = VCC; VCC 6 V; TA 25°C | 4 | |
| Output voltage IOH | IOH | 5 | µA | VI = VIH or VIL; VO = VCC; VCC 6 V; TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.002 | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 2 V; TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 2 V; TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.001 | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 4.5 V; TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.17 | 0.26 | V | VI = VIH or VIL; IOL = 4 mA; VCC 4.5 V; TA 25°C | 4 | |
| Low-level output voltage | VOL | 0.33 | V | VI = VIH or VIL; IOL = 4 mA; VCC 4.5 V; TA -40°C to 85°C | 4 | ||
| Low-level output voltage | VOL | 0.15 | 0.26 | V | VI = VIH or VIL; IOL = 5.2 mA; VCC 6 V; TA 25°C | 4 | |
| Input leakage current | II | -0.1 | 0.1 | µA | VI = VCC or 0; VCC 6 V; TA 25°C | 4 | |
| Input leakage current | II | -1 | 1 | µA | VI = VCC or 0; VCC 6 V; TA -40°C to 85°C | 4 | |
| Supply current | ICC | 2 | µA | VI = VCC or 0; IO = 0; VCC 6 V; TA 25°C | 4 | ||
| Supply current | ICC | 20 | µA | VI = VCC or 0; IO = 0; VCC 6 V; TA -40°C to 85°C | 4 | ||
| Input capacitance | Ci | 3 | 10 | pF | VCC 2 V to 6 V; TA 25°C | 4 | |
| Input capacitance | Ci | 10 | pF | VCC 2 V to 6 V; TA -40°C to 85°C | 4 | ||
| Propagation delay, low-to-high | tplh | 60 | 105 | ns | A or B to Y; VCC 2 V; TA 25°C | 5 | |
| Propagation delay, low-to-high | tplh | 131 | ns | A or B to Y; VCC 2 V; TA -40°C to 85°C | 5 | ||
| Propagation delay, low-to-high | tplh | 13 | 25 | ns | A or B to Y; VCC 4.5 V; TA 25°C | 5 | |
| Propagation delay, low-to-high | tplh | 31 | ns | A or B to Y; VCC 4.5 V; TA -40°C to 85°C | 5 | ||
| Propagation delay, low-to-high | tplh | 10 | 23 | ns | A or B to Y; VCC 6 V; TA 25°C | 5 | |
| Propagation delay, low-to-high | tplh | 27 | ns | A or B to Y; VCC 6 V; TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tphl | 50 | 100 | ns | A or B to Y; VCC 2 V; TA 25°C | 5 | |
| Propagation delay, high-to-low | tphl | 125 | ns | A or B to Y; VCC 2 V; TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tphl | 10 | 20 | ns | A or B to Y; VCC 4.5 V; TA 25°C | 5 | |
| Propagation delay, high-to-low | tphl | 25 | ns | A or B to Y; VCC 4.5 V; TA -40°C to 85°C | 5 | ||
| Propagation delay, high-to-low | tphl | 8 | 17 | ns | A or B to Y; VCC 6 V; TA 25°C | 5 | |
| Propagation delay, high-to-low | tphl | 21 | ns | A or B to Y; VCC 6 V; TA -40°C to 85°C | 5 | ||
| Transition time | tt | 38 | 75 | ns | Y; VCC 2 V; TA 25°C | 5 | |
| Transition time | tt | 95 | ns | Y; VCC 2 V; TA -40°C to 85°C | 5 | ||
| Transition time | tt | 8 | 15 | ns | Y; VCC 4.5 V; TA 25°C | 5 | |
| Transition time | tt | 19 | ns | Y; VCC 4.5 V; TA -40°C to 85°C | 5 | ||
| Transition time | tt | 6 | 13 | ns | Y; VCC 6 V; TA 25°C | 5 | |
| Transition time | tt | 16 | ns | Y; VCC 6 V; TA -40°C to 85°C | 5 | ||
| Junction-to-ambient thermal resistance | RθJA | 151.7 | °C/W | TSSOP-14 | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 79.4 | °C/W | TSSOP-14 | 4 | ||
| Junction-to-board thermal resistance | RθJB | 94.7 | °C/W | TSSOP-14 | 4 | ||
| Power dissipation capacitance per gate | Cpd | 20 | pF | No load; VCC 2 V to 6 V | 5 |
CAD (KiCad official)
- Symbol:
74HC03MT - Footprint:
Package_SO:TSSOP-14_4.4x5mm_P0.65mm - 3D model: TSSOP-14 (KiCad packages3D, STEP)
- 3D model files:
74hc03mt-etched.step/74hc03mt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);74hc03mt.step/74hc03mt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HGSEMI datasheet (12 pp, sha256
59efd34230dfb57b, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 74HC03MT
**HGSEMI** · Logic Gates · TSSOP-14
74HC03MT from HGSEMI, in a TSSOP-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1A | input | Input channel 1, input A of the first NAND gate, which performs Y = A ● B in positive logic. |
| 2 | 1B | input | Input channel 1, input B of the first NAND gate, which performs Y = A ● B in positive logic. |
| 3 | 1Y | output | Output channel 1, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 4 | 2A | input | Input channel 2, input A of the second NAND gate, which performs Y = A ● B in positive logic. |
| 5 | 2B | input | Input channel 2, input B of the second NAND gate, which performs Y = A ● B in positive logic. |
| 6 | 2Y | output | Output channel 2, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 7 | GND | power_in | Ground reference for the device; the open-drain outputs sink current to this pin. |
| 8 | 3Y | output | Output channel 3, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 9 | 3A | input | Input channel 3, input A of the third NAND gate, which performs Y = A ● B in positive logic. |
| 10 | 3B | input | Input channel 3, input B of the third NAND gate, which performs Y = A ● B in positive logic. |
| 11 | 4Y | output | Output channel 4, an open-drain output that can sink current to GND but cannot source current from VCC and needs an external pull-up. |
| 12 | 4A | input | Input channel 4, input A of the fourth NAND gate, which performs Y = A ● B in positive logic. |
| 13 | 4B | input | Input channel 4, input B of the fourth NAND gate, which performs Y = A ● B in positive logic. |
| 14 | VCC | power_in | Positive supply; the recommended supply range is 2 V to 6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HGSEMI |
| Package | TSSOP-14 |
| Category | Logic |
| Pins | 14 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | -0.5 | | 7 | V | | 3 |
| Input clamp current | IIK | -20 | | 20 | mA | VI < 0 or VI > VCC | 3 |
| Output clamp current | IOK | -20 | | 20 | mA | VO < 0 or VO > VCC | 3 |
| Continuous output current | IO | -25 | | 25 | mA | VO = 0 to VCC | 3 |
| Continuous current through VCC or GND | | -50 | | 50 | mA | | 3 |
| Junction temperature | TJ | | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Lead temperature | TL | | | 260 | °C | Soldering, 10 seconds | 3 |
| Supply voltage | VCC | 2 | 5 | 6 | V | | 3 |
| High-level input voltage | VIH | 1.5 | | | V | VCC = 2 V | 3 |
| High-level input voltage | VIH | 3.15 | | | V | VCC = 4.5 V | 3 |
| High-level input voltage | VIH | 4.2 | | | V | VCC = 6 V | 3 |
| Low-level input voltage | VIL | | | 0.5 | V | VCC = 2 V | 3 |
| Low-level input voltage | VIL | | | 1.35 | V | VCC = 4.5 V | 3 |
| Low-level input voltage | VIL | | | 1.8 | V | VCC = 6 V | 3 |
| Input transition rise and fall rate | Δt/Δv | | | 1000 | ns | VCC = 2 V | 3 |
| Input transition rise and fall rate | Δt/Δv | | | 500 | ns | VCC = 4.5 V | 3 |
| Input transition rise and fall rate | Δt/Δv | | | 400 | ns | VCC = 6 V | 3 |
| Operating free-air temperature | TA | -40 | | 85 | °C | | 3 |
| Output voltage IOH | IOH | | 0.01 | 0.5 | µA | VI = VIH or VIL; VO = VCC; VCC 6 V; TA 25°C | 4 |
| Output voltage IOH | IOH | | | 5 | µA | VI = VIH or VIL; VO = VCC; VCC 6 V; TA -40°C to 85°C | 4 |
| Low-level output voltage | VOL | | 0.002 | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 2 V; TA 25°C | 4 |
| Low-level output voltage | VOL | | | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 2 V; TA -40°C to 85°C | 4 |
| Low-level output voltage | VOL | | 0.001 | 0.1 | V | VI = VIH or VIL; IOL = 20 µA; VCC 4.5 V; TA 25°C | 4 |
| Low-level output voltage | VOL | | 0.17 | 0.26 | V | VI = VIH or VIL; IOL = 4 mA; VCC 4.5 V; TA 25°C | 4 |
| Low-level output voltage | VOL | | | 0.33 | V | VI = VIH or VIL; IOL = 4 mA; VCC 4.5 V; TA -40°C to 85°C | 4 |
| Low-level output voltage | VOL | | 0.15 | 0.26 | V | VI = VIH or VIL; IOL = 5.2 mA; VCC 6 V; TA 25°C | 4 |
| Input leakage current | II | -0.1 | | 0.1 | µA | VI = VCC or 0; VCC 6 V; TA 25°C | 4 |
| Input leakage current | II | -1 | | 1 | µA | VI = VCC or 0; VCC 6 V; TA -40°C to 85°C | 4 |
| Supply current | ICC | | 2 | | µA | VI = VCC or 0; IO = 0; VCC 6 V; TA 25°C | 4 |
| Supply current | ICC | | | 20 | µA | VI = VCC or 0; IO = 0; VCC 6 V; TA -40°C to 85°C | 4 |
| Input capacitance | Ci | | 3 | 10 | pF | VCC 2 V to 6 V; TA 25°C | 4 |
| Input capacitance | Ci | | | 10 | pF | VCC 2 V to 6 V; TA -40°C to 85°C | 4 |
| Propagation delay, low-to-high | tplh | | 60 | 105 | ns | A or B to Y; VCC 2 V; TA 25°C | 5 |
| Propagation delay, low-to-high | tplh | | | 131 | ns | A or B to Y; VCC 2 V; TA -40°C to 85°C | 5 |
| Propagation delay, low-to-high | tplh | | 13 | 25 | ns | A or B to Y; VCC 4.5 V; TA 25°C | 5 |
| Propagation delay, low-to-high | tplh | | | 31 | ns | A or B to Y; VCC 4.5 V; TA -40°C to 85°C | 5 |
| Propagation delay, low-to-high | tplh | | 10 | 23 | ns | A or B to Y; VCC 6 V; TA 25°C | 5 |
| Propagation delay, low-to-high | tplh | | | 27 | ns | A or B to Y; VCC 6 V; TA -40°C to 85°C | 5 |
| Propagation delay, high-to-low | tphl | | 50 | 100 | ns | A or B to Y; VCC 2 V; TA 25°C | 5 |
| Propagation delay, high-to-low | tphl | | | 125 | ns | A or B to Y; VCC 2 V; TA -40°C to 85°C | 5 |
| Propagation delay, high-to-low | tphl | | 10 | 20 | ns | A or B to Y; VCC 4.5 V; TA 25°C | 5 |
| Propagation delay, high-to-low | tphl | | | 25 | ns | A or B to Y; VCC 4.5 V; TA -40°C to 85°C | 5 |
| Propagation delay, high-to-low | tphl | | 8 | 17 | ns | A or B to Y; VCC 6 V; TA 25°C | 5 |
| Propagation delay, high-to-low | tphl | | | 21 | ns | A or B to Y; VCC 6 V; TA -40°C to 85°C | 5 |
| Transition time | tt | | 38 | 75 | ns | Y; VCC 2 V; TA 25°C | 5 |
| Transition time | tt | | | 95 | ns | Y; VCC 2 V; TA -40°C to 85°C | 5 |
| Transition time | tt | | 8 | 15 | ns | Y; VCC 4.5 V; TA 25°C | 5 |
| Transition time | tt | | | 19 | ns | Y; VCC 4.5 V; TA -40°C to 85°C | 5 |
| Transition time | tt | | 6 | 13 | ns | Y; VCC 6 V; TA 25°C | 5 |
| Transition time | tt | | | 16 | ns | Y; VCC 6 V; TA -40°C to 85°C | 5 |
| Junction-to-ambient thermal resistance | RθJA | | 151.7 | | °C/W | TSSOP-14 | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 79.4 | | °C/W | TSSOP-14 | 4 |
| Junction-to-board thermal resistance | RθJB | | 94.7 | | °C/W | TSSOP-14 | 4 |
| Power dissipation capacitance per gate | Cpd | | 20 | | pF | No load; VCC 2 V to 6 V | 5 |
## CAD (KiCad official)
- Symbol: `74HC03MT`
- Footprint: `Package_SO:TSSOP-14_4.4x5mm_P0.65mm`
- 3D model: TSSOP-14 (KiCad packages3D, STEP)
- 3D model files: `74hc03mt-etched.step` / `74hc03mt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `74hc03mt.step` / `74hc03mt.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HGSEMI datasheet](docs/74hc03mt-datasheet.pdf) (12 pp, sha256 `59efd34230dfb57b`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/74hc03mt-datasheet.pdf)