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Ray Publish 0.1.0 673bcdd 7d ago

74AHC125S14-13

Diodes Incorporated · Buffers, Drivers, Receivers, Transceivers · SO-14

74AHC125S14-13 from Diodes Incorporated, in a SO-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1OE input Active-low data enable for buffer 1; a high level on this pin places output 1Y in the high-impedance state.
2 1A input Data input for buffer 1; the input is Schmitt-trigger action and is tolerant to 5.5V.
3 1Y tri_state 3-state data output of buffer 1, which can sink or source 8mA at VCC = 4.5V.
4 2OE input Active-low data enable for buffer 2; a high level on this pin places output 2Y in the high-impedance state.
5 2A input Data input for buffer 2; the input is Schmitt-trigger action and is tolerant to 5.5V.
6 2Y tri_state 3-state data output of buffer 2, which can sink or source 8mA at VCC = 4.5V.
7 GND power_in Ground reference for the device.
8 3Y tri_state 3-state data output of buffer 3, which can sink or source 8mA at VCC = 4.5V.
9 3A input Data input for buffer 3; the input is Schmitt-trigger action and is tolerant to 5.5V.
10 3OE input Active-low data enable for buffer 3; a high level on this pin places output 3Y in the high-impedance state.
11 4Y tri_state 3-state data output of buffer 4, which can sink or source 8mA at VCC = 4.5V.
12 4A input Data input for buffer 4; the input is Schmitt-trigger action and is tolerant to 5.5V.
13 4OE input Active-low data enable for buffer 4; a high level on this pin places output 4Y in the high-impedance state.
14 VCC power_in Supply voltage, specified from 2.0V to 5.5V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-14
Category Logic
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD Human Body Model ESD Protection ESD HBM 2 kV TA = +25°C 2
ESD Charged Device Model ESD Protection ESD CDM 1 kV TA = +25°C 2
ESD Machine Model ESD Protection ESD MM 200 V TA = +25°C 2
Supply Voltage Range VCC -0.5 7 V TA = +25°C 2
Input Voltage Range VI -0.5 7 V TA = +25°C 2
Input Clamp Current IIK -20 mA VI < -0.5V 2
Output Clamp Current IOK -20 mA VO < -0.5V 2
Output Clamp Current IOK 25 mA VO > VCC + 0.5V 2
Continuous Output Current IO -25 25 mA -0.5V < VO VCC +0.5V 2
Continuous Current Through VCC ICC 75 mA TA = +25°C 2
Continuous Current Through GND IGND -75 mA TA = +25°C 2
Operating Junction Temperature TJ -40 150 °C TA = +25°C 2
Storage Temperature TSTG -65 150 °C TA = +25°C 2
Total Power Dissipation PTOT 500 mW TA = +25°C 2
Supply Voltage VCC 2 5.5 V 3
Input Voltage VI 0 5.5 V 3
Output Voltage VO 0 V Printed maximum is VCC 3
Input Transition Rise or Fall Rate Δt/ΔV 100 ns/V VCC = 3.0V to 3.6V 3
Input Transition Rise or Fall Rate Δt/ΔV 20 ns/V VCC = 4.5V to 5.5V 3
Operating Free-Air Temperature TA -40 125 °C 3
High-Level Input Voltage VIH 1.5 V VCC = 2.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Input Voltage VIH 2.1 V VCC = 3.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Input Voltage VIH 3.85 V VCC = 5.5V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
Low-Level Input Voltage VIL 0.5 V VCC = 2.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
Low-Level Input Voltage VIL 0.9 V VCC = 3.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
Low-Level Input Voltage VIL 1.65 V VCC = 5.5V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Output Voltage VOH 1.9 V IOH = -50μA; VCC = 2.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Output Voltage VOH 2.9 V IOH = -50μA; VCC = 3.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Output Voltage VOH 4.4 V IOH = -50μA; VCC = 4.5V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
High-Level Output Voltage VOH 2.48 V IOH = -4mA; VCC = 3.0V; TA = -40°C to +85°C 3
High-Level Output Voltage VOH 2.4 V IOH = -4mA; VCC = 3.0V; TA = -40°C to +125°C 3
High-Level Output Voltage VOH 3.8 V IOH = -8mA; VCC = 4.5V; TA = -40°C to +85°C 3
High-Level Output Voltage VOH 3.7 V IOH = -8mA; VCC = 4.5V; TA = -40°C to +125°C 3
Low-Level Output Voltage VOL 0.1 V IOL = 50μA; VCC = 2.0V; same values at TA = -40°C to +85°C and -40°C to +125°C 3
Low-Level Output Voltage VOL 0.44 V IOL = 4mA; VCC = 3.0V; TA = -40°C to +85°C 3
Low-Level Output Voltage VOL 0.55 V IOL = 4mA; VCC = 3.0V; TA = -40°C to +125°C 3
Z State Leakage Current IOZ -2.5 2.5 μA VCC = 5.5V; VO = 0 to 5.5V; VI = GND or 5.5V; TA = -40°C to +85°C 3
Z State Leakage Current IOZ -10 10 μA VCC = 5.5V; VO = 0 to 5.5V; VI = GND or 5.5V; TA = -40°C to +125°C 3
Input Current II -1 1 μA VCC = 3.6V; VI = GND to 5.5V; TA = -40°C to +85°C 3
Input Current II -2 2 μA VCC = 3.6V; VI = GND to 5.5V; TA = -40°C to +125°C 3
Supply Current ICC 20 μA VCC = 3.6V; VI = GND or VCC, IO = 0; TA = -40°C to +85°C 3
Supply Current ICC 40 μA VCC = 3.6V; VI = GND or VCC, IO = 0; TA = -40°C to +125°C 3
Propagation Delay AN to YN tPD 0.5 11.5 ns Figure 1; CL = 15pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Propagation Delay AN to YN tPD 0.5 7 ns Figure 1; CL = 15pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4
Propagation Delay AN to YN tPD 0.5 14.5 ns Figure 1; CL = 50pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Propagation Delay AN to YN tPD 0.5 9.5 ns Figure 1; CL = 50pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4
Enable Time OEN to YN tEN 0.5 11.5 ns Figure 1; CL = 15pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Enable Time OEN to YN tEN 0.5 7.5 ns Figure 1; CL = 15pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4
Enable Time OEN to YN tEN 0.5 14.5 ns Figure 1; CL = 50pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Enable Time OEN to YN tEN 0.5 9 ns Figure 1; CL = 50pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4
Disable Time OEN to YN tDIS 0.5 12.5 ns Figure 1; CL = 15pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Disable Time OEN to YN tDIS 0.5 8.5 ns Figure 1; CL = 15pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4
Disable Time OEN to YN tDIS 0.5 16.5 ns Figure 1; CL = 50pF; VCC = 3.0V to 3.6V; TA = -40°C to +125°C 4
Disable Time OEN to YN tDIS 0.5 11 ns Figure 1; CL = 50pF; VCC = 4.5V to 5.5V; TA = -40°C to +125°C 4

CAD (KiCad official)

  • Symbol: 74AHC125S14-13
  • Footprint: Adom_Gen:Diodes_Incorporated_74
  • 3D model: SO-14 (KiCad packages3D, STEP)
  • 3D model files: 74ahc125s14-13-etched.step / 74ahc125s14-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74ahc125s14-13.step / 74ahc125s14-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 dec07dcf35c61e3c, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF