# 6G02L

**HL** · MOSFETs · SOT-23-6L

6G02L from HL, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the dual MOSFET (grouped with pin 3 under G in the ordering table); gate-source voltage is limited to ±12 V. |
| 2 | S | passive | Source terminal (grouped with pin 5 under S in the ordering table); drain-source voltage is rated 20 V for the N-channel and -20 V for the P-channel. |
| 3 | G | input | Gate terminal of the dual MOSFET (grouped with pin 1 under G in the ordering table); gate-source voltage is limited to ±12 V. |
| 4 | D | passive | Drain terminal (grouped with pin 6 under D in the ordering table); continuous drain current is 6.3 A (N-channel) and -4.1 A (P-channel) at TC=25°C. |
| 5 | S | passive | Source terminal (grouped with pin 2 under S in the ordering table); drain-source voltage is rated 20 V for the N-channel and -20 V for the P-channel. |
| 6 | D | passive | Drain terminal (grouped with pin 4 under D in the ordering table); continuous drain current is 6.3 A (N-channel) and -4.1 A (P-channel) at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS |  |  | 20 | V |  | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -12 |  | 12 | V |  | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 6.3 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -4.1 |  |  | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current (N-Channel) | ID |  |  | 4 | A | VGS @ 10V, TC=100℃ | 1 |
| Continuous Drain Current (P-Channel) | ID | -2.6 |  |  | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 15 | A |  | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -16 |  |  | A |  | 1 |
| Single Pulsed Avalanche Energy (N-Channel) | EAS |  |  | 72 | mJ |  | 1 |
| Single Pulsed Avalanche Energy (P-Channel) | EAS |  |  | 59 | mJ |  | 1 |
| Avalanche Current (N-Channel) | IAS |  |  | 21 | A |  | 1 |
| Avalanche Current (P-Channel) | IAS | -19 |  |  | A |  | 1 |
| Total Power Dissipation | PD |  |  | 1 | W | TC=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 70 | ℃/W |  | 2 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 125 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 20 |  |  | V | VGS=0V,ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 1 | uA | VDS=16V,VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS |  |  | 5 | uA | VDS=16V,VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.4 |  | 1.2 | V | VGS=VDS,ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 17 | 25 | mΩ | VGS=4.5V,ID=3A | 2 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) |  | 21 | 30 | mΩ | VGS=2.5V,ID=2A | 2 |
| Continuous Source Current (N-Channel) | IS |  |  | 6 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage (N-Channel) | VSD |  |  | 1.2 | V | VGS=0V, IS=1A,TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -20 |  |  | V | VGS=0V,ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | -1 | uA | VDS=-20V,VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | -5 | uA | VDS=-20V,VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±12V,VDS=0V | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.4 | -0.7 | -1 | V | VGS=VDS,ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 30 | 38 | mΩ | VGS=-4.5V,ID=-4.1A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 38 | 53 | mΩ | VGS=-2.5V,ID=-3A | 3 |
| Continuous Source Current (P-Channel) | IS |  |  | -4.1 | A | VG=VD=0V, Force Current | 3 |
| Diode Forward Voltage (P-Channel) | VSD |  |  | -1.2 | V | VGS=0V, IS=-4.1A,TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `6G02L`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `6g02l-etched.step` / `6g02l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `6g02l.step` / `6g02l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](docs/6g02l-datasheet.pdf) (9 pp, sha256 `e0caee30f0f8c0f3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/6g02l-datasheet.pdf)