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6888K

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Shenzhen Fuman MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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6888K

Shenzhen Fuman · MOSFETs · TO-252

6888K from Shenzhen Fuman, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with a maximum gate-source voltage of ±20 V and a typical threshold of 3 V (2 V min, 4 V max at VDS=VGS, ID=250 µA).
2 D passive Drain (center lead, also the mounting tab); rated for 68 V drain-source voltage and 80 A continuous drain current at TC=25°C.
3 S passive Source; current return for the 80 A continuous (TC=25°C) drain current, with a body diode to the drain rated at 80 A continuous.

Key specifications

Parameter Value
Manufacturer Shenzhen Fuman
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 68 V VGS = 0 V, ID = 250 μA 2
Gate Threshold voltage VGS(TH) 2 3 4 V VDS = VGS, ID = 250 uA 2
Drain-Source on-state resistance RDS(On) 7.9 9.5 mΩ VGS = 10 V, ID = 30 A 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 50 V, TC = 125°C 2
Gate Leakage Current, Forward IGSSF 100 nA VGS = 20 V, VDS = 0 V 2
Gate Leakage Current, Reverse IGSSR -100 nA VGS = -20 V, VDS = 0 V 2
Forward Transconductance gFS 34 S VDS = 10 V, ID = 30 A (Note 3) 2
Diode Forward Voltage VSD 1.2 V VGS= 0 V, IS = 40 A 2
Maximum Continuous Drain-Source Diode Forward Current IS 80 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 208 A 2
Drain-Source Voltage VDS 68 V 1
Drain Current - Continuous ID 80 A TC = 25°C 1
Drain Current - Continuous ID 52 A TC = 70°C 1
Drain Current - Pulsed IDM 208 A Note 1 1
Gate-Source Voltage VGS -20 20 V 1
Single Pulsed Avalanche Energy EAS 285 mJ Note 2 1
Repetitive Avalanche Energy EAR 40 mJ Note 1 1
Peak diode recovery dv/dt dv/dt 5.5 V/ns Note 3 1
Power Dissipation PD 108 W TC = 25°C 1
Operating and Storage Temperature Range Tj,Tstg -55 150 °C 1
Maximum lead temperature for soldering 280 °C 1/8 from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 0.58 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.8 °C/W 1

CAD (KiCad official)

  • Symbol: 6888K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 6888k-etched.step / 6888k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 6888k.step / 6888k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Fuman datasheet (7 pp, sha256 07aaf7919ea440e2, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF