component
6800B
Public Made by Adomby adom
HL MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| 6800b-etched.glb | 13d ago |
| 6800b-etched.step | 13d ago |
| 6800b-hero.glb | 13d ago |
| 6800b-hero.overlay.json | 13d ago |
| 6800b.glb | 13d ago |
| 6800b.kicad_mod | 13d ago |
| 6800b.kicad_sym | 13d ago |
| 6800b.lbr | 13d ago |
| 6800b.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
6800B
HL · MOSFETs · SOT-23-6
6800B from HL, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage is limited to ±12 V absolute maximum. |
| 2 | S2 | passive | Source of MOSFET 2 in the dual N-channel 30 V device. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage is limited to ±12 V absolute maximum. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 30 V with 4 A continuous drain current at 25 °C. |
| 5 | S1 | passive | Source of MOSFET 1 in the dual N-channel 30 V device. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 30 V with 4 A continuous drain current at 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Continuous Drain Current | ID | 4 | A | TA=25℃, VGS=4.5V | 1 | ||
| Continuous Drain Current | ID | 2.8 | A | TA=70℃, VGS=4.5V | 1 | ||
| Pulsed Drain Current | IDM | 15 | A | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=4A | 2 |
CAD (KiCad official)
- Symbol:
6800B - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
6800b-etched.step/6800b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);6800b.step/6800b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (5 pp, sha256
4846d7a6e80b008c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).