component
65N06
Public Made by Adomby adom
GOODWORK MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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65N06
GOODWORK · MOSFETs · TO-220
65N06 from GOODWORK, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGS ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-source voltage is rated 60 V and continuous drain current 65 A. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-source voltage rated ±20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 65 | A | 1 | |||
| Pulsed Drain Current | IDM | 240 | A | 1 | |||
| Power Dissipation | PD | 120 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -50 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | ℃/W | Junction to ambient | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =60V, VGS =0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Thermal Resistance Junction to Case (transient) | ZθJC(t) | 0.92 | ℃/W | Junction to case, Max | 4 |
CAD (KiCad official)
- Symbol:
65N06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
65n06-etched.step/65n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);65n06.step/65n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (7 pp, sha256
12d55f8499cb5646, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 65N06
**GOODWORK** · MOSFETs · TO-220
65N06 from GOODWORK, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGS ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-source voltage is rated 60 V and continuous drain current 65 A. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-source voltage rated ±20 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 65 | A | | 1 |
| Pulsed Drain Current | IDM | | | 240 | A | | 1 |
| Power Dissipation | PD | | | 120 | W | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -50 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 62.5 | ℃/W | Junction to ambient | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =60V, VGS =0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Thermal Resistance Junction to Case (transient) | ZθJC(t) | | | 0.92 | ℃/W | Junction to case, Max | 4 |
## CAD (KiCad official)
- Symbol: `65N06`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `65n06-etched.step` / `65n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `65n06.step` / `65n06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](docs/65n06-datasheet.pdf) (7 pp, sha256 `12d55f8499cb5646`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/65n06-datasheet.pdf)