component
5N65F
Public Made by Adomby adom
GOODWORK MOSFETs, ITO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
5N65F
GOODWORK · MOSFETs · ITO-220AB
5N65F from GOODWORK, in a ITO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, rated VGSS ±30 V with VGS = 10 V used for the RDS(ON) specification. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated VDSS 650 V with continuous drain current ID 5 A. |
| 3 | Source | passive | Source terminal of the MOSFET, with maximum body-diode continuous current IS 5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | ITO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 1 | |
| Drain Current Continuous | ID | 5 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | TC=25°C | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 112 | mJ | Note 3 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 3.2 | V/ns | Note 4 | 1 | ||
| Power Dissipation | PD | 36 | W | TC=25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.92 | 2.2 | Ω | VGS=10V, ID=2.5A | 2 |
CAD (KiCad official)
- Symbol:
5N65F - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: ITO-220AB (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (5 pp, sha256
63fb4021210a4658, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 5N65F
**GOODWORK** · MOSFETs · ITO-220AB
5N65F from GOODWORK, in a ITO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, rated VGSS ±30 V with VGS = 10 V used for the RDS(ON) specification. |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated VDSS 650 V with continuous drain current ID 5 A. |
| 3 | Source | passive | Source terminal of the MOSFET, with maximum body-diode continuous current IS 5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | ITO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | TC=25°C | 1 |
| Drain Current Continuous | ID | | | 5 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | TC=25°C | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 112 | mJ | Note 3 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 3.2 | V/ns | Note 4 | 1 |
| Power Dissipation | PD | | | 36 | W | TC=25°C | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | µA | VDS=650V, VGS=0V | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 1.92 | 2.2 | Ω | VGS=10V, ID=2.5A | 2 |
## CAD (KiCad official)
- Symbol: `5N65F`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: ITO-220AB (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](docs/5n65f-datasheet.pdf) (5 pp, sha256 `63fb4021210a4658`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/5n65f-datasheet.pdf)