component
5N50
Public Made by Adomby adom
JUXING MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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5N50
JUXING · MOSFETs · TO-252
5N50 from JUXING, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, also connected to the tab; drain-source voltage 500 V max, continuous drain current 5.0 A, pulsed 16 A. |
| 3 | S | passive | Source; body diode forward voltage VSD max 1.5 V at IS=5.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JUXING |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown Voltage | V(BR)DSS | 500 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-Source diode forward Voltage | VSD | 1.5 | V | VGS=0V,IS=5.0A | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=500V,VGS=0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS=0V,VGS=±30V | 2 | |
| Gate-threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250µA | 2 | |
| Static drain-source on-resistance | RDS(on) | 1.2 | 1.36 | Ω | VGS=10V,ID=1.0A | 2 | |
| Drain-Source Voltage | VDS | 500 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | 1 | |||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | 1 | |||
| Power Dissipation | PD | 48 | W | 1 | |||
| Junction Temperature | Tj | -45 | 125 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 100 | ℃/W | 1 | |||
| Thermal Resistance From Junction To Case | RθJC | 2.6 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
5N50 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
5n50-etched.step/5n50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);5n50.step/5n50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JUXING datasheet (3 pp, sha256
a7c46e4b80b4be4e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 5N50
**JUXING** · MOSFETs · TO-252
5N50 from JUXING, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V, threshold VGS(th) 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, also connected to the tab; drain-source voltage 500 V max, continuous drain current 5.0 A, pulsed 16 A. |
| 3 | S | passive | Source; body diode forward voltage VSD max 1.5 V at IS=5.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JUXING |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown Voltage | V(BR)DSS | 500 | | | V | VGS=0V,ID=250µA | 2 |
| Drain-Source diode forward Voltage | VSD | | | 1.5 | V | VGS=0V,IS=5.0A | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=500V,VGS=0V | 2 |
| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS=0V,VGS=±30V | 2 |
| Gate-threshold voltage | VGS(th) | 2 | | 4 | V | VDS=VGS,ID=250µA | 2 |
| Static drain-source on-resistance | RDS(on) | | 1.2 | 1.36 | Ω | VGS=10V,ID=1.0A | 2 |
| Drain-Source Voltage | VDS | | | 500 | V | | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 5 | A | | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 280 | mJ | | 1 |
| Power Dissipation | PD | | | 48 | W | | 1 |
| Junction Temperature | Tj | -45 | | 125 | ℃ | | 1 |
| Thermal Resistance From Junction To Ambient | RθJA | | | 100 | ℃/W | | 1 |
| Thermal Resistance From Junction To Case | RθJC | | | 2.6 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `5N50`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `5n50-etched.step` / `5n50-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `5n50.step` / `5n50.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JUXING datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603392936407691264) (3 pp, sha256 `a7c46e4b80b4be4e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/5n50-datasheet.pdf)