component

5N10T-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors5n10t-msfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
5n10t-ms / README.md
History Download
Ray Publish 0.1.0 a21d23b 3d ago

5N10T-MS

MSKSEMI · MOSFETs · SOT-89

5N10T-MS from MSKSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1.0 to 3.0 V at ID=250 µA.
2 D passive Drain (middle lead, also the tab); rated for VDS of 100 V and continuous ID of 5.0 A at TA=25℃.
3 S passive Source; carries the body-diode continuous current of up to 3.0 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 100 V 2
Gate-source Voltage VGS -20 20 V 2
Drain Current ID 5 A TA=25℃ 2
Drain Current ID 2.4 A TA=70℃ 2
Pulsed Drain Current IDM 21 A Pulse width ≤300us, duty cycle ≤2% 2
Total Power Dissipation PD 1.2 W @ TA=25℃ 2
Thermal Resistance Junction-to-Ambient RθJA 104 ℃/W Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS= 0V, ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 3
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS= VGS, ID=250μA 3
Static Drain-Source On-Resistance RDS(ON) 110 140 mΩ VGS= 10V, ID=3.0A 3
Static Drain-Source On-Resistance RDS(ON) 160 300 mΩ VGS= 4.5V, ID=2.0A 3
Diode Forward Voltage VSD 0.8 1.2 V IS=3.0A,VGS=0V 3
Maximum Body-Diode Continuous Current IS 3 A 3
Input Capacitance Ciss 206 pF VDS=50V,VGS=0V,f=1MHZ 3
Output Capacitance Coss 29 pF VDS=50V,VGS=0V,f=1MHZ 3
Reverse Transfer Capacitance Crss 1.4 pF VDS=50V,VGS=0V,f=1MHZ 3
Total Gate Charge Qg 4.3 nC VGS=10V,VDS=50V,ID=3.0A 3
Gate-Source Charge Qgs 1.5 nC VGS=10V,VDS=50V,ID=3.0A 3
Gate-Drain Charge Qgd 1.1 nC VGS=10V,VDS=50V,ID=3.0A 3
Turn-on Delay Time tD(on) 14.7 ns VGS=10V,VDD=50V,ID=3.0A, RGEN=2Ω 3
Turn-on Rise Time tr 3.5 ns VGS=10V,VDD=50V,ID=3.0A, RGEN=2Ω 3
Turn-off Delay Time tD(off) 20.9 ns VGS=10V,VDD=50V,ID=3.0A, RGEN=2Ω 3
Turn-off Fall Time tf 2.7 ns VGS=10V,VDD=50V,ID=3.0A, RGEN=2Ω 3
Reverse Recovery Time trr 32 ns IS=3A,di/dt=100 A/μs 3
Reverse Recovery Charge Qrr 39 nC 3
Peak Reverse Recovery Current Irrm 2.1 A 3

CAD (KiCad official)

  • Symbol: 5N10T-MS
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 5n10t-ms-etched.step / 5n10t-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 5n10t-ms.step / 5n10t-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 ae0636b42e8f6887, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF