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Contents

README

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5N10

GOODWORK · MOSFETs · SOT-23

5N10 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate of the N-channel enhancement-mode MOSFET; the datasheet rates gate-source voltage VGS at ±20 V.
2 SOURCE passive Source of the MOSFET; the body diode is rated for a maximum continuous forward current IS of 5 A and a pulsed current ISM of 12 A.
3 DRAIN passive Drain of the MOSFET; the device is rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 5.0 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: 5N10
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 5n10-etched.step / 5n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 5n10.step / 5n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (6 pp, sha256 c307595270261e1a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF