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Ray Publish 0.1.0 0bc5d6c 5h ago

553MILF

RENESAS · Clock Buffers, Drivers · SOIC-8

553MILF from RENESAS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Supply pin to be connected to +2.5 V, +3.3 V or +5.0 V, with a 0.01 µF decoupling capacitor placed between VDD (pin 1) and GND (pin 4) as close to the device as possible.
2 Q0 output Clock output 0, which should use the same termination, load and trace geometry as the other outputs to keep output-to-output skew at or below the 50 ps maximum.
3 Q1 output Clock output 1, which should use the same termination, load and trace geometry as the other outputs to keep output-to-output skew at or below the 50 ps maximum.
4 GND power_in Ground connection for the device, decoupled to VDD (pin 1) with a 0.01 µF capacitor placed as close to the device as possible.
5 ICLK input Clock input that is 5 V tolerant, with an input frequency range of 0 to 200 MHz as given in the AC characteristics.
6 Q2 output Clock output 2, which should use the same termination, load and trace geometry as the other outputs to keep output-to-output skew at or below the 50 ps maximum.
7 Q3 output Clock output 3, which should use the same termination, load and trace geometry as the other outputs to keep output-to-output skew at or below the 50 ps maximum.
8 OE input Output enable input that tri-states the outputs when low and should be connected to VDD for normal operation.

Key specifications

Parameter Value
Manufacturer RENESAS
Package SOIC-8
Category Clock and Timing
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VDD 7 V 3
Output Enable and All Outputs voltage -0.5 V 3
ICLK voltage -0.5 5.5 V 3
Storage Temperature -65 150 ° C 3
Junction Temperature 125 ° C 3
Soldering Temperature 260 ° C 3
Ambient Operating Temperature (industrial) -40 85 ° C 3
Power Supply Voltage (measured in respect to GND) 2.375 5.25 V 3
Thermal Resistance Junction to Ambient θJA 150 ° C/W Still air 6
Thermal Resistance Junction to Ambient θJA 140 ° C/W 1 m/s air flow 6
Thermal Resistance Junction to Ambient θJA 120 ° C/W 3 m/s air flow 6
Thermal Resistance Junction to Case θJC 40 ° C/W 6
Operating Voltage VDD 2.375 2.625 V VDD=2.5 V ±5%, -40 to +85 °C 3
Input High Voltage, ICLK VIH 5.5 V VDD=2.5 V ±5%, -40 to +85 °C; Note 1 3
Input High Voltage, OE VIH 1.8 V VDD=2.5 V ±5%, -40 to +85 °C 3
Input Low Voltage, OE VIL 0.7 V VDD=2.5 V ±5%, -40 to +85 °C 3
Output High Voltage VOH 2 V VDD=2.5 V ±5%, -40 to +85 °C; IOH = -16 mA 3
Output Low Voltage VOL 0.4 V VDD=2.5 V ±5%, -40 to +85 °C; IOL = 16 mA 3
Operating Supply Current IDD 25 mA VDD=2.5 V ±5%, -40 to +85 °C; No load, 135 MHz 3
Input Capacitance CIN 5 pF VDD=2.5 V ±5%, -40 to +85 °C; ICLK, OE pin 3
Short Circuit Current IOS -28 28 mA VDD=2.5 V ±5%, -40 to +85 °C 3
Operating Voltage VDD 3.15 3.45 V VDD=3.3 V ±5%, -40 to +85 °C 4
Input High Voltage, ICLK VIH 5.5 V VDD=3.3 V ±5%, -40 to +85 °C; Note 1 4
Input High Voltage, OE VIH 2 V VDD=3.3 V ±5%, -40 to +85 °C 4
Input Low Voltage, OE VIL 0.8 V VDD=3.3 V ±5%, -40 to +85 °C 4
Output High Voltage VOH 2.4 V VDD=3.3 V ±5%, -40 to +85 °C; IOH = -25 mA 4
Output Low Voltage VOL 0.4 V VDD=3.3 V ±5%, -40 to +85 °C; IOL = 25 mA 4
Operating Supply Current IDD 35 mA VDD=3.3 V ±5%, -40 to +85 °C; No load, 135 MHz 4
Input Capacitance CIN 5 pF VDD=3.3 V ±5%, -40 to +85 °C; ICLK, OE pin 4
Short Circuit Current IOS -50 50 mA VDD=3.3 V ±5%, -40 to +85 °C 4
Operating Voltage VDD 4.75 5.25 V VDD=5 V ±5%, -40 to +85 °C 4
Operating Supply Current IDD 45 mA VDD=5 V ±5%, -40 to +85 °C; No load, 135 MHz 4
Short Circuit Current IOS -80 80 mA VDD=5 V ±5%, -40 to +85 °C 4
Input Frequency 0 200 MHz VDD = 2.5 V ±5%, Ambient Temperature -40 to +85 °C 5
Output Rise Time tOR 1 1.5 ns VDD = 2.5 V ±5%, -40 to +85 °C; 0.8 to 2.0 V, CL=15 pF 5
Output Fall Time tOF 1 1.5 ns VDD = 2.5 V ±5%, -40 to +85 °C; 2.0 to 0.8 V, CL=15 pF 5
Propagation Delay 2.2 3 5 ns VDD = 2.5 V ±5%, -40 to +85 °C; Note 1 5
Additive Period Jitter 1 ps VDD = 2.5 V ±5%, -40 to +85 °C 5
Output to Output Skew 0 50 ps VDD = 2.5 V ±5%, -40 to +85 °C; Note 2; rising edges at VDD/2 5
Device to Device Skew 500 ps VDD = 2.5 V ±5%, -40 to +85 °C; rising edges at VDD/2 5
Output Rise Time tOR 0.6 1 ns VDD = 3.3 V ±5%, -40 to +85 °C; 0.8 to 2.0 V, CL=15 pF 5
Output Fall Time tOF 0.6 1 ns VDD = 3.3 V ±5%, -40 to +85 °C; 2.0 to 0.8 V, CL=15 pF 5
Propagation Delay 2 2.4 4 ns VDD = 3.3 V ±5%, -40 to +85 °C; Note 1 5
Output Rise Time tOR 0.3 0.7 ns VDD = 5 V ±5%, -40 to +85 °C; 0.8 to 2.0 V, CL=15 pF 5
Output Fall Time tOF 0.3 0.7 ns VDD = 5 V ±5%, -40 to +85 °C; 2.0 to 0.8 V, CL=15 pF 5
Propagation Delay 1.8 2.5 4 ns VDD = 5 V ±5%, -40 to +85 °C; Note 1 5

CAD (KiCad official)

  • Symbol: 553MILF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: 553milf-etched.step / 553milf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 553milf.step / 553milf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RENESAS datasheet (9 pp, sha256 5dfc6b3abd6da676, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF