component

5302DG-AA3-R

Public Made by Adom

by adom

UTC(Unisonic Tech) IGBTs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor5302dg-aa3-rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
5302dg-aa3-r / README.md
History Download
Ray Publish 0.1.0 8020218 4h ago

5302DG-AA3-R

UTC(Unisonic Tech) · IGBTs · SOT-223

5302DG-AA3-R from UTC(Unisonic Tech), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; absolute maximum base current is 1 A (2 A peak, tP<5ms) and emitter-base voltage is 10 V.
2 C passive Collector of the NPN transistor; VCBO 800 V, VCEO 400 V, collector current 2 A (4 A peak, tP<5ms).
3 E passive Emitter of the NPN transistor with internal free-wheeling diode; emitter-base breakdown voltage is 10 V minimum.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package SOT-223
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 800 V TA=25°C 3
Collector-Emitter Voltage VCEO 400 V TA=25°C 3
Emitter-Base Voltage VEBO 10 V TA=25°C 3
Collector Current IC 2 A TA=25°C 3
Collector Peak Current ICM 4 A tP<5ms 3
Base Current IB 1 A TA=25°C 3
Base Peak Current IBM 2 A tP<5ms 3
Power Dissipation SOT-223 PD 1 W TC≤25°C, SOT-223 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -65 150 °C 3
Junction to Ambient Thermal Resistance SOT-223 θJA 175 °C/W SOT-223 3
Junction to Case Thermal Resistance SOT-223 θJC 125 °C/W SOT-223 3
Collector-Base Breakdown Voltage BVCBO 800 V IC=1mA, IB=0 4
Collector-Emitter Breakdown Voltage BVCEO 400 V IC=10mA, IE=0 (Note) 4
Collector-Emitter Breakdown Voltage BVCES 700 V IC=1mA, VBE=0V 4
Emitter-Base Breakdown Voltage BVEBO 10 V IE=1mA, IC=0 4
Collector Cutoff Current ICBO 1 μA VCB=800V, IE=0 4
Emitter Cutoff Current IEBO 1 μA VEB=9V, IC=0 4
DC Current Gain 1 hFE1 10 VCE=5V, IC=10mA 4
DC Current Gain 2 hFE2 10 40 VCE=5V, IC=400mA 4
DC Current Gain 3 hFE3 5 VCE=5V, IC=1A 4
Collector-Emitter Saturation Voltage 1 VCE(SAT1) 0.5 V IC=0.5A, IB=0.1A (Note) 4
Collector-Emitter Saturation Voltage 2 VCE(SAT2) 1.1 1.5 V IC=1A, IB=0.25A (Note) 4
Base-Emitter Saturation Voltage 1 VBE(SAT1) 1.1 V IC=0.5A, IB=0.1A (Note) 4
Base-Emitter Saturation Voltage 2 VBE(SAT2) 1.2 V IC=1A, IB=0.25A (Note) 4
Turn On Time tON 0.15 0.3 μS VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS, Duty Cycle<1% 4
Fall Time tF 0.2 0.4 μS VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS, Duty Cycle<1% 4
Storage Time tSTG 0.5 0.9 μS VCC=250V, IC=1A, IB1=IB2=0.2A, tP=25uS, Duty Cycle<1% 4
Diode Forward Voltage Drop VF 1.4 V IC=1A 4
Diode Fall Time tF 800 μS IC=1A 4

CAD (KiCad official)

  • Symbol: 5302DG-AA3-R
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: 5302dg-aa3-r-etched.step / 5302dg-aa3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 5302dg-aa3-r.step / 5302dg-aa3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 e43f6b572a1dd40a, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF