component
50WQ10FN
Public Made by Adomby adom
SMC Sangdest Microelectronicstronic Nanjing Schottky Diodes, DPAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 50wq10fn-etched.glb | 6d ago |
| 50wq10fn-etched.step | 6d ago |
| 50wq10fn-hero.glb | 6d ago |
| 50wq10fn-hero.overlay.json | 6d ago |
| 50wq10fn.glb | 6d ago |
| 50wq10fn.kicad_mod | 6d ago |
| 50wq10fn.kicad_sym | 6d ago |
| 50wq10fn.lbr | 6d ago |
| 50wq10fn.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
50WQ10FN
SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · DPAK
50WQ10FN from SMC Sangdest Microelectronicstronic Nanjing, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first diode of the center-tap pair, with the common cathode on pin 2/tab; VRRM is 100 V. |
| 2 | K | passive | Common cathode (center tap), shown as base/cathode and connected to the tab; average forward current is 5.5 A total. |
| 3 | A2 | passive | Anode of the second diode of the center-tap pair, with the common cathode on pin 2/tab; VRRM is 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SMC Sangdest Microelectronicstronic Nanjing |
| Package | DPAK |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage Drop, TJ = 25 C | VF1 | 0.75 | 0.85 | V | @ 5A, Pulse, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Forward Voltage Drop, TJ = 25 C | VF1 | 0.77 | 0.91 | V | @ 10A, Pulse, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Forward Voltage Drop, TJ = 125 C | VF2 | 0.61 | 0.72 | V | @ 5 A, Pulse, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Forward Voltage Drop, TJ = 125 C | VF2 | 0.63 | 0.74 | V | @ 10 A, Pulse, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Reverse Current, TJ = 25 C | IR1 | 0.002 | 1 | mA | @VR = rated VR, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Reverse Current, TJ = 125 C | IR2 | 0.4 | 4 | mA | @VR = rated VR, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% | 1 | |
| Junction Capacitance | CT | 180 | 250 | pF | @VR = 5V, TC = 25 C, fSIG = 1MHz | 1 | |
| Voltage Rate of Change | dv/dt | 10000 | V/s | 1 | |||
| Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM, VRWM, VR | 100 | V | 1 | |||
| Average Rectified Forward Current | IF (AV) | 5.5 | A | 50% duty cycle @Tc=135°C, rectangular wave form | 1 | ||
| Peak One Cycle Non-Repetitive Surge Current | IFSM | 130 | A | 8.3ms, Half Sine pulse | 1 | ||
| Junction Temperature | TJ | -55 | 150 | C | 2 | ||
| Storage Temperature | Tstg | -55 | 150 | C | 2 | ||
| Typical Thermal Resistance Junction to Case | RJC | 5 | C/W | 2 |
CAD (KiCad official)
- Symbol:
50WQ10FN - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
50wq10fn-etched.step/50wq10fn-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);50wq10fn.step/50wq10fn.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256
e191dff31c7167c2, retrieved 2026-10-22, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).