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50WQ10FN

SMC Sangdest Microelectronicstronic Nanjing · Schottky Diodes · DPAK

50WQ10FN from SMC Sangdest Microelectronicstronic Nanjing, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first diode of the center-tap pair, with the common cathode on pin 2/tab; VRRM is 100 V.
2 K passive Common cathode (center tap), shown as base/cathode and connected to the tab; average forward current is 5.5 A total.
3 A2 passive Anode of the second diode of the center-tap pair, with the common cathode on pin 2/tab; VRRM is 100 V.

Key specifications

Parameter Value
Manufacturer SMC Sangdest Microelectronicstronic Nanjing
Package DPAK
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage Drop, TJ = 25 C VF1 0.75 0.85 V @ 5A, Pulse, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% 1
Forward Voltage Drop, TJ = 25 C VF1 0.77 0.91 V @ 10A, Pulse, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% 1
Forward Voltage Drop, TJ = 125 C VF2 0.61 0.72 V @ 5 A, Pulse, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% 1
Forward Voltage Drop, TJ = 125 C VF2 0.63 0.74 V @ 10 A, Pulse, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% 1
Reverse Current, TJ = 25 C IR1 0.002 1 mA @VR = rated VR, TJ = 25 C; pulse width < 300 µs, duty cycle < 2% 1
Reverse Current, TJ = 125 C IR2 0.4 4 mA @VR = rated VR, TJ = 125 C; pulse width < 300 µs, duty cycle < 2% 1
Junction Capacitance CT 180 250 pF @VR = 5V, TC = 25 C, fSIG = 1MHz 1
Voltage Rate of Change dv/dt 10000 V/s 1
Peak Repetitive Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage VRRM, VRWM, VR 100 V 1
Average Rectified Forward Current IF (AV) 5.5 A 50% duty cycle @Tc=135°C, rectangular wave form 1
Peak One Cycle Non-Repetitive Surge Current IFSM 130 A 8.3ms, Half Sine pulse 1
Junction Temperature TJ -55 150 C 2
Storage Temperature Tstg -55 150 C 2
Typical Thermal Resistance Junction to Case RJC 5 C/W 2

CAD (KiCad official)

  • Symbol: 50WQ10FN
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: 50wq10fn-etched.step / 50wq10fn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 50wq10fn.step / 50wq10fn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SMC Sangdest Microelectronicstronic Nanjing datasheet (4 pp, sha256 e191dff31c7167c2, retrieved 2026-10-22, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF