component

50P03-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor50p03-vbfactory-2.0.0extractor-text

Verified 50P03-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: 50P03-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3dlsaa8s/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ 50p03-vb.kicad_sym✓ 50p03-vb.kicad_mod✓ 50p03-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7h ago
viewers 50p03-vb: viewers · Ray 7h ago
50p03-vb-etched.glb Publish 0.1.0 · Ray 7h ago
50p03-vb-etched.step 50p03-vb: factory component page (tier=lcsc) · Ray 7h ago
50p03-vb-hero.glb 50p03-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7h ago
50p03-vb-hero.overlay.json Publish 0.1.0 · Ray 7h ago
50p03-vb.glb Publish 0.1.0 · Ray 7h ago
50p03-vb.kicad_mod Publish 0.1.0 · Ray 7h ago
50p03-vb.kicad_sym Publish 0.1.0 · Ray 7h ago
50p03-vb.lbr Publish 0.1.0 · Ray 7h ago
50p03-vb.step Publish 0.1.0 · Ray 7h ago
package.json Publish 0.1.0 · Ray 7h ago
page.json Set visibility: public · Ray 7h ago
README.md Publish 0.1.0 · Ray 7h ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 7h ago

50P03-VB

VBsemi Elec · MOSFETs · TO-252

50P03-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -1 V to -3 V at ID = -250 µA.
2 D passive Drain of the P-channel MOSFET (also the metal tab), rated for VDS of -30 V and a pulsed drain current of -240 A.
3 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -60 A and pulsed current of -240 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -240 A 1
Avalanche Current IAR -50 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Power Dissipation PD 127 W TC = 25 °C (TO-220AB and TO-263) 1
Power Dissipation PD 3.75 W TA = 25 °C (TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB mount (TO-263) 1
Junction-to-Ambient Thermal Resistance RthJA 62.5 °C/W Free air (TO-220AB) 1
Junction-to-Case Thermal Resistance RthJC 0.8 °C/W 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -120 A VDS = -5 V, VGS = -10 V 2
Forward Transconductance gfs 20 S VDS = -15 V, ID = -75 A 2
Source-Drain Forward Voltage VSD -1.2 -1.5 V IF = -75 A, VGS = 0 V 2
Reverse Recovery Time trr 55 100 ns IF = -75 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A 2
Reverse Recovery Charge Qrr 0.07 0.25 µC 2
Total Gate Charge Qg 160 240 nC VDS = -15 V, VGS = -10 V, ID = -75 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω 2
Rise Time tr 225 360 ns VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 150 240 ns VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω 2
Fall Time tf 210 340 ns VDD = -15 V, RL = 0.2 Ω, ID = -75 A, VGEN = -10 V, Rg = 2.5 Ω 2
Pulsed Current ISM -240 A 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = -10 V, ID = -30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.019 Ω VGS = -10 V, ID = -30 A, TJ = 175 °C 2
Gate-Source Charge Qgs 32 nC 2
Gate-Drain Charge Qgd 30 nC 2

CAD (KiCad official)

  • Symbol: 50P03-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 50p03-vb-etched.step / 50p03-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 50p03-vb.step / 50p03-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 77f06c70972e8b5b, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF