component
50N06L-TA3-T
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown50N06L-TA3-T
UTC(Unisonic Tech) · MOSFETs · TO-220
50N06L-TA3-T from UTC(Unisonic Tech), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS) with a gate threshold voltage VGS(TH) of 2.0 V min to 4.0 V max. |
| 2 | D | passive | Drain; drain-source voltage rated 60 V (VDSS) with continuous drain current of 50 A at TC = 25°C and 200 A pulsed. |
| 3 | S | passive | Source; maximum continuous body-diode forward current IS is 50 A and pulsed ISM is 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 3 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 3 | ||
| Continuous Drain Current | ID | 50 | A | TC = 25°C | 3 | ||
| Continuous Drain Current | ID | 35 | A | TC = 100°C | 3 | ||
| Pulsed Drain Current | IDM | 200 | A | Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 480 | mJ | L=0.38mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C | 3 | ||
| Avalanche Energy Repetitive | EAR | 13 | mJ | Note 2 | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 7 | V/ns | ISD ≤50A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation TO-220 | PD | 120 | W | TC=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operation and Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient TO-220 | θJA | 62 | °C/W | TO-220 | 3 | ||
| Junction to Case TO-220 | θJC | 1.24 | °C/W | TO-220 | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0 V, ID = 250 μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 60 V, VGS = 0 V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 20V, VDS = 0 V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -20V, VDS = 0 V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 18 | 23 | mΩ | VGS = 10 V, ID = 25 A | 4 | |
| Input Capacitance | CISS | 900 | 1220 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 4 | |
| Output Capacitance | COSS | 430 | 550 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 80 | 100 | pF | VGS = 0 V, VDS = 25 V, f = 1MHz | 4 | |
| Turn-On Delay Time | tD(ON) | 60 | 80 | ns | VDD = 30V, ID =0.5 A, RG = 25Ω | 4 | |
| Turn-On Rise Time | tR | 180 | 220 | ns | VDD = 30V, ID =0.5 A, RG = 25Ω | 4 | |
| Turn-Off Delay Time | tD(OFF) | 300 | 350 | ns | VDD = 30V, ID =0.5 A, RG = 25Ω | 4 | |
| Turn-Off Fall Time | tF | 200 | 250 | ns | VDD = 30V, ID =0.5 A, RG = 25Ω | 4 | |
| Total Gate Charge | QG | 60 | 80 | nC | VDS = 50V, VGS = 10 V, ID = 1.3A | 4 | |
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | IS = 50A, VGS = 0 V | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 50 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 200 | A | 4 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.07 | V/°C | ID = 250 μA, Referenced to 25°C | 4 | ||
| Gate-Source Charge | QGS | 9 | nC | VDS = 50V, VGS = 10 V, ID = 1.3A | 4 | ||
| Gate-Drain Charge | QGD | 20 | nC | VDS = 50V, VGS = 10 V, ID = 1.3A | 4 | ||
| Reverse Recovery Time | tRR | 54 | ns | IS = 50A, VGS = 0 V, dIF/dt = 100 A/μs | 4 | ||
| Reverse Recovery Charge | QRR | 81 | μC | IS = 50A, VGS = 0 V, dIF/dt = 100 A/μs | 4 |
CAD (KiCad official)
- Symbol:
50N06L-TA3-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
50n06l-ta3-t-etched.step/50n06l-ta3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);50n06l-ta3-t.step/50n06l-ta3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
7dec6c8c3aca71c1, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).