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4P0304-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4P0304-VB

VBsemi Elec · MOSFETs · TO-252

4P0304-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold of -1 to -3 V at ID = -250 µA.
2 D passive Drain; continuous current up to -100 A (package limited) and VDS rated at -30 V, also connected to the tab.
3 S passive Source; main current return of the P-channel MOSFET, with continuous body-diode current of -80 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current (TJ=25 °C) IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ=125 °C) IDSS -50 µA VDS = - 30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (TJ=175 °C) IDSS -250 µA VDS = - 30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -120 A VDS = - 5 V, VGS = - 10 V 2
Forward Transconductance gfs 20 S VDS = - 15 V, ID = - 75 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = - 15 V, RL = 0.2 Ω, ID ≅ - 75 A, VGEN = - 10 V, Rg = 2.5 Ω 2
Rise Time tr 225 360 ns VDD = - 15 V, RL = 0.2 Ω, ID ≅ - 75 A, VGEN = - 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 150 240 ns VDD = - 15 V, RL = 0.2 Ω, ID ≅ - 75 A, VGEN = - 10 V, Rg = 2.5 Ω 2
Fall Time tf 210 340 ns VDD = - 15 V, RL = 0.2 Ω, ID ≅ - 75 A, VGEN = - 10 V, Rg = 2.5 Ω 2
Diode Continuous Current IS -80 A TC = 25 °C 2
Diode Pulsed Current ISM -240 A TC = 25 °C 2
Diode Forward Voltage VSD -1.2 -1.5 V IF = - 75 A, VGS = 0 V 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A IF = - 75 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.07 0.25 µC IF = - 75 A, dI/dt = 100 A/µs 2
Input Capacitance Ciss 8000 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Output Capacitance Coss 1565 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 715 pF VGS = 0 V, VDS = - 25 V, f = 1 MHz 2
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -90 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM -280 A 1
Avalanche Current IAR -80 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Power Dissipation PD 187 W TC = 25 °C 1
Power Dissipation PD 3.75 W TA = 25 °C (TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient, PCB Mount RthJA 40 °C/W PCB Mount (TO-263) 1
Junction-to-Ambient, Free Air RthJA 62.5 °C/W Free Air (TO-220AB) 1
Junction-to-Case RthJC 0.8 °C/W 1

CAD (KiCad official)

  • Symbol: 4P0304-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 4p0304-vb-etched.step / 4p0304-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4p0304-vb.step / 4p0304-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 269eab30c9bcf57c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF