component
4NM80G-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| 4nm80g-tn3-r-etched.step | 12d ago |
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4NM80G-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
4NM80G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel super-junction MOSFET, listed as pin 1 (Gate) in the symbol section and as G in the TO-252 pin assignment. |
| 2 | D | passive | Drain terminal of the 800V N-channel MOSFET, listed as pin 2 (Drain) in the symbol section and as D in the TO-252 pin assignment. |
| 3 | S | passive | Source terminal of the 800V N-channel MOSFET, listed as pin 3 (Source) in the symbol section and as S in the TO-252 pin assignment. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 800 | V | VGS = 0V, ID = 250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 800V, VGS = 0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2.5 | 4.5 | V | VDS = VGS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.52 | Ω | VGS = 10V, ID = 2.0A | 4 | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | 4 | |||
| Drain-Source Voltage | VDSS | 800 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Drain Current Continuous | ID | 4 | A | 3 | |||
| Pulsed Drain Current (Note 2) | IDM | 16 | A | 3 | |||
| Avalanche Current (Note 2) | IAR | 1.5 | A | 3 | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 179 | mJ | 3 | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.93 | V/ns | 3 | |||
| Power Dissipation TO-252 | PD | 22 | W | 3 | |||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient TO-252 | θJA | 110 | °C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | 3 | ||
| Junction to Case TO-252 | θJC | 5.68 | °C/W | Note: device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | 3 |
CAD (KiCad official)
- Symbol:
4NM80G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4nm80g-tn3-r-etched.step/4nm80g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4nm80g-tn3-r.step/4nm80g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256
89269aed7bfa438a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).