component
4N80L-TA3-T
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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4N80L-TA3-T
UTC Unisonic Tech · MOSFETs · TO-220
4N80L-TA3-T from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±30 V, with threshold VGS(TH) of 3.0 to 5.0 V at VDS=VGS and ID=250 µA. |
| 2 | Drain | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDSS of 800 V and a continuous drain current ID of 4.0 A. |
| 3 | Source | passive | Source of the N-channel MOSFET, which is the reference for the gate drive; the body diode continuous current IS is rated at 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 800 | V | TC=25°C | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 3 | |
| Continuous Drain Current | ID | 4 | A | TC=25°C | 3 | ||
| Pulsed Drain Current | IDM | 16 | A | TC=25°C | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 460 | mJ | L=57mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C | 3 | ||
| Repetitive Avalanche Energy | EAR | 13 | mJ | Repetitive rating, pulse width limited by maximum junction temperature | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4 | V/ns | ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation (TO-220/TO-262) | PD | 106 | W | TO-220/TO-262 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS=VGS, ID=250µA | 4 | |
| Drain-Source On-State Resistance | RDS(ON) | 2.3 | 3 | Ω | VGS=10V, ID=2A | 4 | |
| Input Capacitance | CISS | 680 | 880 | pF | VGS=0V, VDS=25V, f=1.0MHz | 4 | |
| Output Capacitance | COSS | 75 | 100 | pF | VGS=0V, VDS=25V, f=1.0MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 8.6 | 12 | pF | VGS=0V, VDS=25V, f=1.0MHz | 4 | |
| Total Gate Charge | QG | 19 | 25 | nC | VDS=640V, VGS=10V, ID=4A | 4 | |
| Turn-ON Delay Time | tD(ON) | 16 | 40 | ns | VDD=400V, ID=4A, RG=25Ω | 4 | |
| Turn-ON Rise Time | tR | 45 | 100 | ns | VDD=400V, ID=4A, RG=25Ω | 4 | |
| Turn-OFF Delay Time | tD(OFF) | 35 | 80 | ns | VDD=400V, ID=4A, RG=25Ω | 4 | |
| Turn-OFF Fall Time | tF | 35 | 80 | ns | VDD=400V, ID=4A, RG=25Ω | 4 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | 4 | |||
| Drain-Source Breakdown Voltage | BVDSS | 800 | V | VGS=0V, ID=250µA | 4 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 950 | mV/°C | ID=250μA, Referenced to 25°C | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=800V, VGS=0V | 4 | ||
| Drain-Source Leakage Current | IDSS | 100 | µA | VDS=640V, TC=125°C | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VDS=0V, VGS=30V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VDS=0V, VGS=-30V | 4 | ||
| Gate-Source Charge | QGS | 4.2 | nC | VDS=640V, VGS=10V, ID=4A | 4 | ||
| Gate-Drain Charge | QGD | 9.1 | nC | VDS=640V, VGS=10V, ID=4A | 4 | ||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A, VGS=0V | 4 | ||
| Body Diode Reverse Recovery Time | trr | 575 | ns | VGS=0V, IS=4A, dIF/dt=100A/μs | 4 | ||
| Body Diode Reverse Recovery Charge | Qrr | 3.65 | μC | VGS=0V, IS=4A, dIF/dt=100A/μs | 4 | ||
| Junction to Ambient (TO-220 group) | θJA | 62.5 | °C/W | TO-220/TO-220F group as printed | 3 | ||
| Junction to Case (TO-220/TO-262 group) | θJC | 1.18 | °C/W | TO-220/TO-262 group as printed | 3 |
CAD (KiCad official)
- Symbol:
4N80L-TA3-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
4n80l-ta3-t-etched.step/4n80l-ta3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n80l-ta3-t.step/4n80l-ta3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256
e76b6917578ecd4d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).