component
4N70L-ML-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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4N70L-ML-TN3-R
UTC(Unisonic Tech) · MOSFETs · TO-252
4N70L-ML-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel power MOSFET, labeled G in the pin assignment for the TO-252 package. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, labeled D in the pin assignment for the TO-252 package. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, labeled S in the pin assignment for the TO-252 package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 700 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Avalanche Current | IAR | 4.4 | A | Note 2 | 3 | ||
| Drain Current Continuous | ID | 4.4 | A | 3 | |||
| Pulsed Drain Current | IDM | 17.6 | A | Note 2 | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 260 | mJ | Note 3 | 3 | ||
| Avalanche Energy Repetitive | EAR | 10.6 | mJ | Note 2 | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4 | 3 | ||
| Power Dissipation TO-251/TO-252 | PD | 49 | W | TO-251/TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS = 0 V, ID = 250 μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 700 V, VGS = 0 V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30 V, VDS = 0 V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30 V, VDS = 0 V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | 2.8 | Ω | VGS = 10 V, ID = 2.2 A | 4 | |
| Input Capacitance | CISS | 520 | 670 | pF | VDS = 25 V, VGS = 0 V, f = 1MHz | 4 | |
| Output Capacitance | COSS | 70 | 90 | pF | 4 | ||
| Reverse Transfer Capacitance | CRSS | 8 | 11 | pF | 4 | ||
| Turn-On Delay Time | tD(ON) | 13 | 35 | ns | VDD = 350V, ID = 4.4A, RG = 25Ω (Note 1, 2) | 4 | |
| Turn-On Rise Time | tR | 45 | 100 | ns | 4 | ||
| Turn-Off Delay Time | tD(OFF) | 25 | 60 | ns | 4 | ||
| Turn-Off Fall Time | tF | 35 | 80 | ns | 4 | ||
| Total Gate Charge | QG | 15 | 20 | nC | VDS = 560V, ID = 4.4A, VGS = 10 V (Note 1, 2) | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.4 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 17.6 | A | 4 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.6 | V/°С | ID = 250μA, Referenced to 25°C | 4 | ||
| Gate-Source Charge | QGS | 3.4 | nC | 4 | |||
| Gate-Drain Charge | QGD | 7.1 | nC | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 4.4 A | 4 | ||
| Reverse Recovery Time | trr | 250 | ns | VGS = 0 V, IS = 4.4 A, dI/dt = 100 A/μs (Note 1) | 4 | ||
| Reverse Recovery Charge | QRR | 1.5 | μC | 4 | |||
| Junction to Ambient TO-251/TO-252 | θJA | 110 | °C/W | TO-251/ TO-252 | 3 | ||
| Junction to Case TO-251/TO-252 | θJC | 2.55 | °C/W | TO-251/ TO-252 | 3 |
CAD (KiCad official)
- Symbol:
4N70L-ML-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4n70l-ml-tn3-r-etched.step/4n70l-ml-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n70l-ml-tn3-r.step/4n70l-ml-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (7 pp, sha256
f1b0fbf17a663856, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 4N70L-ML-TN3-R
**UTC(Unisonic Tech)** · MOSFETs · TO-252
4N70L-ML-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel power MOSFET, labeled G in the pin assignment for the TO-252 package. |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, labeled D in the pin assignment for the TO-252 package. |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, labeled S in the pin assignment for the TO-252 package. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 700 | V | | 3 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |
| Avalanche Current | IAR | | | 4.4 | A | Note 2 | 3 |
| Drain Current Continuous | ID | | | 4.4 | A | | 3 |
| Pulsed Drain Current | IDM | | | 17.6 | A | Note 2 | 3 |
| Avalanche Energy Single Pulsed | EAS | | | 260 | mJ | Note 3 | 3 |
| Avalanche Energy Repetitive | EAR | | | 10.6 | mJ | Note 2 | 3 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 4 | 3 |
| Power Dissipation TO-251/TO-252 | PD | | | 49 | W | TO-251/TO-252 | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Operating Temperature | TOPR | -55 | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 700 | | | V | VGS = 0 V, ID = 250 μA | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = 700 V, VGS = 0 V | 4 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30 V, VDS = 0 V | 4 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS = -30 V, VDS = 0 V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 2.6 | 2.8 | Ω | VGS = 10 V, ID = 2.2 A | 4 |
| Input Capacitance | CISS | | 520 | 670 | pF | VDS = 25 V, VGS = 0 V, f = 1MHz | 4 |
| Output Capacitance | COSS | | 70 | 90 | pF | | 4 |
| Reverse Transfer Capacitance | CRSS | | 8 | 11 | pF | | 4 |
| Turn-On Delay Time | tD(ON) | | 13 | 35 | ns | VDD = 350V, ID = 4.4A, RG = 25Ω (Note 1, 2) | 4 |
| Turn-On Rise Time | tR | | 45 | 100 | ns | | 4 |
| Turn-Off Delay Time | tD(OFF) | | 25 | 60 | ns | | 4 |
| Turn-Off Fall Time | tF | | 35 | 80 | ns | | 4 |
| Total Gate Charge | QG | | 15 | 20 | nC | VDS = 560V, ID = 4.4A, VGS = 10 V (Note 1, 2) | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 4.4 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 17.6 | A | | 4 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.6 | | V/°С | ID = 250μA, Referenced to 25°C | 4 |
| Gate-Source Charge | QGS | | 3.4 | | nC | | 4 |
| Gate-Drain Charge | QGD | | 7.1 | | nC | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | 1.4 | | V | VGS = 0 V, IS = 4.4 A | 4 |
| Reverse Recovery Time | trr | | 250 | | ns | VGS = 0 V, IS = 4.4 A, dI/dt = 100 A/μs (Note 1) | 4 |
| Reverse Recovery Charge | QRR | | 1.5 | | μC | | 4 |
| Junction to Ambient TO-251/TO-252 | θJA | | 110 | | °C/W | TO-251/ TO-252 | 3 |
| Junction to Case TO-251/TO-252 | θJC | | 2.55 | | °C/W | TO-251/ TO-252 | 3 |
## CAD (KiCad official)
- Symbol: `4N70L-ML-TN3-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `4n70l-ml-tn3-r-etched.step` / `4n70l-ml-tn3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4n70l-ml-tn3-r.step` / `4n70l-ml-tn3-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC(Unisonic Tech) datasheet](docs/4n70l-ml-tn3-r-datasheet.pdf) (7 pp, sha256 `f1b0fbf17a663856`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/4n70l-ml-tn3-r-datasheet.pdf)