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4N65KL-TF3-T

UTC(Unisonic Tech) · MOSFETs · TO-220F

4N65KL-TF3-T from UTC(Unisonic Tech), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, with a gate-source voltage rating VGSS of ±30 V.
2 D passive Drain terminal of the MOSFET, with a drain-source voltage rating VDSS of 650 V and a continuous drain current ID of 4.0 A.
3 S passive Source terminal of the MOSFET; the datasheet gives no separate pin-level limit for this terminal beyond the device ratings.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 3
Gate-Source Voltage VGSS -30 30 V 3
Continuous Drain Current ID 4 A 3
Pulsed Drain Current IDM 16 A Pulse width limited by maximum junction temperature (Note 2) 3
Avalanche Energy Single Pulsed EAS 200 mJ L=25mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C (Note 3) 3
Peak Diode Recovery dv/dt dv/dt 2.63 V/ns ISD≤4.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) 3
Power Dissipation TO-220F PD 34 W TC = 25°C 3
Junction Temperature TJ 150 °C 3
Operating Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Forward Gate-Source Leakage Current IGSS 100 nA VGS = 30 V, VDS = 0 V 4
Reverse Gate-Source Leakage Current IGSS -100 nA VGS = -30 V, VDS = 0 V 4
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 4
Static Drain-Source On-State Resistance RDS(ON) 1.77 2.5 Ω VGS = 10 V, ID = 2.2A 4
Input Capacitance CISS 430 750 pF 4
Output Capacitance COSS 60 90 pF 4
Reverse Transfer Capacitance CRSS 6 11 pF VDS = 25 V, VGS = 0V, f = 1MHz 4
Total Gate Charge QG 17 20 nC 4
Gate-Source Charge QGS 4.9 5.5 nC 4
Gate-Drain Charge QGD 3.7 4.2 nC VDS=50V, VGS=10V, ID=1.3A, IG=100μA (Note 1, 2) 4
Turn-On Delay Time tD(ON) 44 60 ns 4
Turn-On Rise Time tR 50 100 ns 4
Turn-Off Delay Time tD(OFF) 80 130 ns 4
Turn-Off Fall Time tF 45 70 ns VDD =30V, VGS=10V, ID =0.5A, RG=25Ω (Note 1, 2) 4
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS = 650 V, VGS = 0 V 4
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.6 V/°С ID=250μA, Referenced to 25°C 4
Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V IS =4.4A, VGS =0V 4
Body Diode Reverse Recovery Time trr 410 ns 4
Body Diode Reverse Recovery Charge Qrr 2.12 µC IS=4.4A, VGS=0V, dIF/dt=100A/µs (Note 1) 4
Junction to Ambient TO-220F/TO-220F1 θJA 62.5 °C/W 3
Junction to Case TO-220F/TO-220F1 θJC 3.47 °C/W 3

CAD (KiCad official)

  • Symbol: 4N65KL-TF3-T
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 94bd7bf2dbdc06ff, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF