component
4N60L
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
4N60L
UMW · MOSFETs · TO-252
4N60L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 600V N-channel MOSFET; gate-source voltage is rated ±30 V (VGS). |
| 2 | D | passive | DRAIN terminal; drain-source voltage is rated 600 V (VDS) and continuous drain current is 4 A at TC=25°C. |
| 3 | S | passive | SOURCE terminal, the reference for VGS and the source side of the 600 V (VDS) channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250µA | 3 | |
| Drain-source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V, TJ=25°C | 3 | ||
| Drain-source Leakage Current | IDSS | 10 | µA | VDS=480V, VGS=0V, TJ=125°C | 3 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 3 | |
| Static Drain-source On Resistance | RDS(ON) | 2.4 | Ω | VGS=10V, ID=2A | 3 | ||
| Continuous Diode Forward Current | IS | 4 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | TJ=25°C, IS=4A, VGS=0V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Input capacitance | Ciss | 580 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | ||
| Turn-Off Delay Time | tD(off) | 20 | ns | VDD=300V, ID=4A, RG=25Ω | 3 | ||
| Total Gate Charge | Qg | 14.8 | nC | ID=4A, VDS=480V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 3.4 | nC | ID=4A, VDS=480V, VGS=10V | 3 | ||
| Gate-to-Drain Charge | Qgd | 4.8 | nC | ID=4A, VDS=480V, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 390 | ns | TJ=25°C, IF=4A, di/dt=100A/μs | 3 | ||
| Reverse Recovery Charge | Qrr | 1.5 | uC | TJ=25°C, IF=4A, di/dt=100A/μs | 3 | ||
| Drain-source Voltage | VDS | 600 | V | TC=25°C | 1 | ||
| Gate-source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | TC=100°C | 1 | ||
| Drain Current Pulsed | IDM | 16 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation (TO-252) | PD | 50 | W | TC=25°C, TO-252 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 128 | mJ | Starting TJ=25°C, VDD=50V, L=25mH, RG=25Ω, IAS=4A | 1 |
CAD (KiCad official)
- Symbol:
4N60L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4n60l-etched.step/4n60l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n60l.step/4n60l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
2850665516152d50, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 4N60L
**UMW** · MOSFETs · TO-252
4N60L from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 600V N-channel MOSFET; gate-source voltage is rated ±30 V (VGS). |
| 2 | D | passive | DRAIN terminal; drain-source voltage is rated 600 V (VDS) and continuous drain current is 4 A at TC=25°C. |
| 3 | S | passive | SOURCE terminal, the reference for VGS and the source side of the 600 V (VDS) channel. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDSS | 600 | | | V | VGS=0V, ID=250µA | 3 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250µA | 3 |
| Drain-source Leakage Current | IDSS | | | 1 | µA | VDS=600V, VGS=0V, TJ=25°C | 3 |
| Drain-source Leakage Current | IDSS | | | 10 | µA | VDS=480V, VGS=0V, TJ=125°C | 3 |
| Gate-body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±30V, VDS=0 | 3 |
| Static Drain-source On Resistance | RDS(ON) | | | 2.4 | Ω | VGS=10V, ID=2A | 3 |
| Continuous Diode Forward Current | IS | | | 4 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.4 | V | TJ=25°C, IS=4A, VGS=0V | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.6 | | V/°C | ID=250µA, Referenced to 25°C | 3 |
| Input capacitance | Ciss | | 580 | | pF | VGS=0V, VDS=25V, f=1MHz | 3 |
| Turn-Off Delay Time | tD(off) | | 20 | | ns | VDD=300V, ID=4A, RG=25Ω | 3 |
| Total Gate Charge | Qg | | 14.8 | | nC | ID=4A, VDS=480V, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 3.4 | | nC | ID=4A, VDS=480V, VGS=10V | 3 |
| Gate-to-Drain Charge | Qgd | | 4.8 | | nC | ID=4A, VDS=480V, VGS=10V | 3 |
| Reverse Recovery Time | trr | | 390 | | ns | TJ=25°C, IF=4A, di/dt=100A/μs | 3 |
| Reverse Recovery Charge | Qrr | | 1.5 | | uC | TJ=25°C, IF=4A, di/dt=100A/μs | 3 |
| Drain-source Voltage | VDS | | | 600 | V | TC=25°C | 1 |
| Gate-source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 4 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 2.5 | A | TC=100°C | 1 |
| Drain Current Pulsed | IDM | | | 16 | A | Pulse width limited by maximum junction temperature | 1 |
| Power Dissipation (TO-252) | PD | | | 50 | W | TC=25°C, TO-252 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 128 | mJ | Starting TJ=25°C, VDD=50V, L=25mH, RG=25Ω, IAS=4A | 1 |
## CAD (KiCad official)
- Symbol: `4N60L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `4n60l-etched.step` / `4n60l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4n60l.step` / `4n60l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875525707743232) (10 pp, sha256 `2850665516152d50`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/4n60l-datasheet.pdf)