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4N60KG-TM3-T

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UTC(Unisonic Tech) MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4N60KG-TM3-T

UTC(Unisonic Tech) · MOSFETs · TO-251

4N60KG-TM3-T from UTC(Unisonic Tech), in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal (G) of the N-channel MOSFET; gate-source voltage is rated ±30 V per the absolute maximum ratings.
2 D passive Drain terminal (D) of the N-channel MOSFET; drain-source voltage is rated 600 V (VDSS) per the absolute maximum ratings.
3 S passive Source terminal (S) of the N-channel MOSFET; the reference terminal for the 600 V drain-source and ±30 V gate-source ratings.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 3
Gate-Source Voltage VGSS -30 30 V 3
Avalanche Current IAR 4.4 A Note 2 3
Continuous Drain Current ID 4 A 3
Pulsed Drain Current IDM 16 A Note 2 3
Single Pulsed Avalanche Energy EAS 100 mJ Note 3 3
Repetitive Avalanche Energy EAR 10.6 mJ Note 2 3
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4 3
Power Dissipation TO-251 PD 50 W TO-251/TO-251S, TO-252 rating 3
Junction Temperature TJ 150 °C 3
Operating Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Junction to Ambient TO-251 θJA 83 °C/W TO-251/TO-251S 3
Junction to Case TO-251 θJc 2.5 °C/W TO-251/TO-251S 3
Drain-Source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250μA 4
Drain-Source Leakage Current at 125 C IDSS 10 μA VDS=600V, VGS=0V, TC=125°C 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 4
Gate Threshold Voltage VGS(TH) 3 5 V VDS=VGS, ID=250μA 4
Static Drain-Source On-State Resistance RDS(ON) 2.2 2.5 Ω VGS=10 V, ID=2.2A 4
Input Capacitance CISS 520 670 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Output Capacitance COSS 70 90 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Reverse Transfer Capacitance CRSS 8 11 pF VDS = 25V, VGS = 0V, f = 1MHz 4
Turn-On Delay Time tD(ON) 13 35 ns VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) 4
Turn-On Rise Time tR 45 100 ns VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) 4
Turn-Off Delay Time tD(OFF) 25 60 ns VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) 4
Turn-Off Fall Time tF 35 80 ns VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) 4
Total Gate Charge QG 15 20 nC VDS= 480V, ID= 4.0A, VGS= 10V (Note 1, 2) 4

CAD (KiCad official)

  • Symbol: 4N60KG-TM3-T
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: 4n60kg-tm3-t-etched.step / 4n60kg-tm3-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n60kg-tm3-t.step / 4n60kg-tm3-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256 13c92a874788cc60, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF