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Ray Publish 0.1.0 74af33d 3d ago

4N37

Vishay Intertech · Optocouplers - Phototransistor Output · DIP-6

4N37 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the infrared LED input, with forward current rated at 50 mA maximum and reverse voltage 6 V maximum.
2 C passive Cathode of the infrared LED input; 1 A surge current (t ≤ 10 µs) and 70 mW input power dissipation maximum.
3 NC unconnected No internal connection.
4 E passive Emitter of the NPN phototransistor output; emitter-base breakdown voltage is 7 V.
5 C passive Collector of the NPN phototransistor output, rated VCEO 70 V and IC 50 mA maximum (100 mA for t ≤ 1 ms).
6 B passive Base of the NPN phototransistor, brought out for the base connection.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optocoupler/LED/Digital Tube/Photoelectric Device
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector emitter breakdown voltage BVCEO 30 V IC = 1 mA 2
Emitter collector breakdown voltage BVECO 7 V IE = 100 μA 2
Collector base breakdown voltage BVCBO 70 V IC = 100 μA, IB = 1 μA 2
Forward voltage VF 1.3 1.5 V IF = 10 mA 2
Forward voltage at low temperature VF 0.9 1.7 V IF = 10 mA, Tamb = - 55 °C 2
Reverse current IR 0.1 10 μA VR = 6 V 2
Collector emitter leakage current ICEO 5 50 nA VCE = 10 V, IF = 0 2
Collector emitter leakage current ICEO 500 μA VCE = 30 V, IF = 0, Tamb = 100 °C 2
Resistance, input output RIO 1011 Ω VIO = 500 V 2
DC current transfer ratio CTRDC 100 % VCE = 10 V, IF = 10 mA 3
DC current transfer ratio CTRDC 40 50 % VCE = 10 V, IF = 10 mA, TA = - 55 °C to + 100 °C 3
Reverse voltage VR 6 V 1
Forward current IF 50 mA 1
Surge current IFSM 1 A t ≤ 10 μs 1
Input power dissipation Pdiss 70 mW INPUT 1
Collector emitter breakdown voltage VCEO 70 V 1
Emitter base breakdown voltage VEBO 7 V 1
Collector current IC 50 mA 1
Collector current IC 100 mA t ≤ 1 ms 1
Output power dissipation Pdiss 70 mW OUTPUT 1
Isolation test voltage VISO 5000 VRMS 1
Isolation resistance RIO 1012 Ω VIO = 500 V, Tamb = 25 °C 2
Isolation resistance RIO 1011 Ω VIO = 500 V, Tamb = 100 °C 2
Storage temperature Tstg -55 150 °C 2
Operating temperature Tamb -55 100 °C 2
Junction temperature Tj 100 °C 2
Soldering temperature Tsld 260 °C max.10 s dip soldering: distance to seating plane ≥ 1.5 mm 2
Junction capacitance Cj 50 pF VR = 0 V, f = 1 MHz 2
Capacitance CO 25 pF VR = 0 V, f = 1 MHz 2
Collector emitter capacitance CCE 6 pF VCE = 0 2
Capacitance, input output CIO 0.6 pF f = 1 MHz 2
Switching time ton, toff 10 μs VCC = 10 V, IC = 2 mA, RL = 100 Ω 3

CAD (KiCad official)

  • Symbol: 4N37
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: 4n37-etched.step / 4n37-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n37.step / 4n37.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 c7a6ec386422bf8d, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF