# 4N35-000E

**Broadcom Limited** · Transistor, Photovoltaic Output Optoisolators · DIP-6

4N35-000E from Broadcom Limited, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of the input-side GaAs infrared LED. Typical forward voltage VF = 1.2 V at IF = 10 mA; absolute maximum average forward current IF = 60 mA; reverse input voltage VR = 6 V max. |
| 2 | CATHODE | passive | Cathode of the input-side GaAs infrared LED. Current returns from LED anode (pin 1) through this pin. Input power dissipation PI = 100 mW max. |
| 3 | NC | unconnected | No internal connection. Leave floating or tie to a convenient node for board layout; no electrical function. |
| 4 | EMITTER | passive | Emitter of the output-side NPN phototransistor. Emitter-collector breakdown voltage BVECO = 7 V min; typically tied to output-side ground/return. |
| 5 | COLLECTOR | passive | Collector of the output-side NPN phototransistor. Collector-emitter breakdown BVCEO = 30 V min; collector current IC = 100 mA max; VCE(sat) ≤ 0.3 V at IF = 50 mA, IC = 2 mA. CTR ≥ 100% at IF = 10 mA, VCE = 10 V. |
| 6 | BASE | passive | Base of the output-side NPN phototransistor. Collector-base breakdown BVCBO = 70 V min. Usually left open (photocurrent drives base); may be tied to emitter through a resistor (e.g. RBE = 100 kΩ or 500 kΩ) to adjust sensitivity and speed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Broadcom Limited |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |

## Ordering variants

Same part, different packaging or reel option.

- `4N35-000E`
- `4N35-000E060E`
- `4N35-000E300E`
- `4N35-000E360E`
- `4N35-000E500E`
- `4N35-000E560E`
- `4N35-000EW00E`
- `4N35-000EW60E`

## CAD (KiCad official)

- Symbol: `4N35-000E`
- Footprint: `Package_DIP:DIP-6_W7.62mm`
- 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files: `4n35-000e-etched.step` / `4n35-000e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4n35-000e.step` / `4n35-000e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Broadcom Limited datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602777970650337280) (None pp, sha256 `3e0e2bb002761dc2`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/4n35-000e-datasheet.pdf)