component
4N33M
Public Made by Adomby adom
onsemi Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4N33M
onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6
4N33M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | LED anode of the gallium arsenide infrared emitter; the absolute maximum continuous forward current is 80 mA and reverse voltage is 3 V (page 4). |
| 2 | CATHODE | passive | LED cathode of the gallium arsenide infrared emitter; the same limits apply, with continuous forward current of 80 mA and reverse voltage of 3 V (page 4). |
| 3 | N/C | unconnected | No internal connection, as labelled in the schematic; leave unconnected. |
| 4 | EMITTER | passive | Emitter of the silicon planar photodarlington detector; the emitter-collector breakdown voltage BVECO is 5 V minimum (page 4). |
| 5 | COLLECTOR | passive | Collector of the silicon planar photodarlington detector; collector-emitter breakdown BVCEO is 30 V minimum and continuous collector current is 150 mA maximum (page 4). |
| 6 | BASE | passive | Photodarlington base, brought out so an external base-emitter resistor RBE can be used to adjust switching speed and CTR (pages 7 and 8). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -40 | 125 | °C | 4 | ||
| Operating Temperature | TOPR | -40 | 100 | °C | 4 | ||
| Junction Temperature | TJ | -40 | 125 | °C | 4 | ||
| Lead Solder Temperature | TSOL | 260 | °C | for 10 seconds | 4 | ||
| Total Device Power Dissipation | PD | 270 | mW | @ TA = 25°C | 4 | ||
| Continuous Forward Current (LED) | IF | 80 | mA | 4 | |||
| Reverse Voltage (LED) | VR | 3 | V | 4 | |||
| Forward Current - Peak (LED) | IF(pk) | 3 | A | 300 µs, 2% Duty Cycle | 4 | ||
| LED Power Dissipation | PD | 120 | mW | @ TA = 25°C | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | V | 4 | |||
| Collector-Base Breakdown Voltage | BVCBO | 30 | V | 4 | |||
| Emitter-Collector Breakdown Voltage | BVECO | 5 | V | 4 | |||
| Detector Power Dissipation | PD | 150 | mW | @ TA = 25°C | 4 | ||
| Continuous Collector Current | IC | 150 | mA | 4 | |||
| Collector Output Current (CTR) | IC(CTR) | 50 | mA | IF = 10 mA, VCE = 10 V, IB = 0 | 6 | ||
| Current Transfer Ratio (CTR) | IC(CTR) | 500 | % | IF = 10 mA, VCE = 10 V, IB = 0 | 6 | ||
| Input Forward Voltage | VF | 1.2 | 1.5 | V | IF = 10 mA | 5 | |
| Reverse Leakage Current | IR | 0.001 | 100 | µA | VR = 3.0 V | 5 | |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | 60 | V | IC = 1.0 mA, IB = 0 | 5 | |
| Collector-Base Breakdown Voltage | BVCBO | 30 | 100 | V | IC = 100 µA, IE = 0 | 5 | |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | 10 | V | IE = 100 µA, IB = 0 | 5 | |
| Collector-Emitter Dark Current | ICEO | 1 | 100 | nA | VCE = 10 V, Base Open | 5 | |
| Input Capacitance | C | 150 | pF | VF = 0V, f = 1.0 MHz | 5 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1 | V | IF = 8 mA, IC = 2.0 mA | 6 | ||
| Turn-on Time | ton | 5 | µs | IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω | 6 | ||
| Turn-off Time | toff | 100 | µs | IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω | 6 | ||
| Bandwidth | BW | 30 | kHz | 6 | |||
| Input-Output Isolation Voltage | VISO | 4170 | VACRMS | t = 1 Minute | 6 | ||
| Isolation Capacitance | CISO | 0.2 | pF | VI-O = 0 V, f = 1 MHz | 6 | ||
| Isolation Resistance | RISO | 1011 | Ω | VI-O = ±500 VDC, TA = 25°C | 6 |
CAD (KiCad official)
- Symbol:
4N33M - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
4n33m-etched.step/4n33m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n33m.step/4n33m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (14 pp, sha256
6e410ca7bcb792c4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).