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4N32M

onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-6

4N32M from onsemi, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE input LED anode input; the emitter is rated for 80 mA continuous forward current and 3 V maximum reverse voltage in the absolute maximum ratings.
2 CATHODE input LED cathode; the same 80 mA continuous forward current limit applies, with a 3.0 A peak forward current rating for 300 µs at 2% duty cycle.
3 N/C unconnected Labeled N/C on the schematic and package drawing, so it is not connected internally and is left unconnected.
4 EMITTER passive Photodarlington emitter; the absolute maximum emitter-collector breakdown voltage (BVECO) is 5 V.
5 COLLECTOR passive Photodarlington collector; rated for 150 mA continuous collector current and 30 V collector-emitter breakdown (BVCEO).
6 BASE passive Base is brought out so an optional base-emitter resistor (RBE) can be added to adjust CTR and switching speed, as shown in the RBE performance curves.

Key specifications

Parameter Value
Manufacturer onsemi
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TSTG -40 125 °C 4
Operating Temperature TOPR -40 100 °C 4
Junction Temperature TJ -40 125 °C 4
Lead Solder Temperature TSOL 260 °C for 10 seconds 4
Total Device Power Dissipation PD 270 mW TA = 25°C 4
Continuous Forward Current (LED) IF 80 mA 4
Reverse Voltage (LED) VR 3 V 4
Forward Current, Peak (LED) IF(pk) 3 A 300 µs, 2% Duty Cycle 4
LED Power Dissipation PD 120 mW TA = 25°C 4
Collector-Emitter Breakdown Voltage (absolute maximum table) BVCEO 30 V 4
Collector-Base Breakdown Voltage (absolute maximum table) BVCBO 30 V 4
Emitter-Collector Breakdown Voltage (absolute maximum table) BVECO 5 V 4
Detector Power Dissipation PD 150 mW TA = 25°C 4
Continuous Collector Current IC 150 mA 4
Input Forward Voltage (4NXXM) VF 1.2 1.5 V IF = 10 mA 5
Reverse Leakage Current (4NXXM) IR 0.001 100 µA VR = 3.0 V 5
Collector-Emitter Breakdown Voltage BVCEO 30 60 V IC = 1.0 mA, IB = 0 5
Collector-Base Breakdown Voltage BVCBO 30 100 V IC = 100 µA, IE = 0 5
Emitter-Collector Breakdown Voltage (4NXXM) BVECO 5 10 V IE = 100 µA, IB = 0 5
Collector-Emitter Dark Current ICEO 1 100 nA VCE = 10 V, Base Open 5
Collector Output Current (CTR, mA form) IC(CTR) 50 mA IF = 10 mA, VCE = 10 V, IB = 0 6
Current Transfer Ratio (CTR, % form) IC(CTR) 500 % IF = 10 mA, VCE = 10 V, IB = 0 6
Collector-Emitter Saturation Voltage (4NXXM) VCE(SAT) 1 V IF = 8 mA, IC = 2.0 mA 6
Turn-on Time (4NXXM) ton 5 µs IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω 6
Turn-off Time (4N32M) toff 100 µs IF = 200 mA, IC = 50 mA, VCC = 10 V, RL = 100 Ω 6
Input-Output Isolation Voltage VISO 4170 VACRMS t = 1 Minute 6
Isolation Capacitance CISO 0.2 pF VI-O = 0 V, f = 1 MHz 6
Isolation Resistance RISO 1011 Ω VI-O = ±500 VDC, TA = 25°C 6
Input Capacitance C 150 pF VF = 0V, f = 1.0 MHz 5
Bandwidth BW 30 kHz 6

CAD (KiCad official)

  • Symbol: 4N32M
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: 4n32m-etched.step / 4n32m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n32m.step / 4n32m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (14 pp, sha256 34973fe89e90fc52, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF