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4N0609 TO252-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4N0609 TO252-VB
VBsemi Elec · MOSFETs · TO-252
4N0609 TO252-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage of ±20 V, with RDS(on) specified at VGS = 10 V and 4.5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 60 V drain-source voltage and 100 A pulsed drain current. |
| 3 | S | passive | Source of the N-channel MOSFET, with a continuous diode-conduction source current rating of 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 100 | A | TC = 25 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 50 | A | TC = 25 °C; printed '50a' (package limited) | 1 | ||
| Avalanche Current | IAS | 50 | A | L = 0.1 mH | 1 | ||
| Single Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH, duty cycle ≤ 1 % | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10 s) | RthJA | 15 | 18 | °C/W | t ≤ 10 sec | 1 | |
| Junction-to-Ambient Thermal Resistance (steady state) | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.016 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.02 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = 4.5 V, ID = 15 A | 2 | ||
| Total Gate Charge | Qg | 47 | 70 | nC | VDS = 30 V, VGS = 10 V, ID = 50 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 15 | 25 | ns | VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 50 | ns | VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 20 | 30 | ns | VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Source Current | ISM | 60 | A | TC = 25 °C | 2 | ||
| Reverse Recovery Time | trr | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 | |
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Input Capacitance | Ciss | 2650 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 470 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 225 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VDS = 30 V, VGS = 10 V, ID = 50 A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS = 30 V, VGS = 10 V, ID = 50 A | 2 |
CAD (KiCad official)
- Symbol:
4N0609 TO252-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
4n0609-to252-vb-etched.step/4n0609-to252-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n0609-to252-vb.step/4n0609-to252-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
ee41f2ffa679d608, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).