component

4N0604-VB TO252

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors4n0604-vb to252factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
4n0604-vb-to252 / README.md
History Download
Ray Publish 0.1.0 69eec5a 3d ago

4N0604-VB TO252

VBsemi Elec · MOSFETs · TO-252

4N0604-VB TO252 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage limit is ±20 V, with threshold VGS(th) of 2.0 to 4.0 V at ID = 250 μA.
2 D passive Drain terminal (also the tab/case); VDS rated 60 V, continuous drain current 97 A at TC = 25 °C, pulsed 290 A.
3 S passive Source terminal; continuous source (diode) current 100 A, diode forward voltage 0.9 V typ and 1.5 V max at IF = 50 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 97 A TC = 25 °C 1
Continuous Drain Current ID 56 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 100 A TC = 25 °C 1
Pulsed Drain Current IDM 290 A TC = 25 °C 1
Single Pulse Avalanche Current IAS 45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 45 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 50 °C/W PCB mount, 1" square FR-4 1
Junction-to-Case (Drain) Thermal Resistance RthJC 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VGS = 10 V, VDS ≥ 5 V 2
Output Capacitance Coss 441 555 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 200 250 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate Resistance Rg 1 2 3 Ω f = 1 MHz 2
Fall Time tf 7 11 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 41 62 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed Source Current ISM 290 A 2
Forward Voltage VSD 0.9 1.5 V IF = 50 A, VGS = 0 V 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 4.5 V, ID = 20 A 2
Forward Transconductance gfs 177 S VDS = 15 V, ID = 25 A 2

CAD (KiCad official)

  • Symbol: 4N0604-VB TO252
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 4n0604-vb-to252-etched.step / 4n0604-vb-to252-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n0604-vb-to252.step / 4n0604-vb-to252.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 a857b3e443c0112e, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF