component
4N0604 TO220-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
4N0604 TO220-VB
VBsemi Elec · MOSFETs · TO-220AB
4N0604 TO220-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold of 2.0 V to 3.5 V at ID = 250 μA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage rated 60 V and continuous drain current 210 A (package limited to 120 A). |
| 3 | S | passive | Source; continuous source current (diode conduction) is package limited to 120 A and pulsed source current is 480 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 210 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 75 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 281 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 375 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 125 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | PCB mount, 1" square PCB (FR-4) | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 350 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 120 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Gate Resistance | Rg | 0.5 | 1.1 | 1.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 19 | 29 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 23 | 35 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 83 | 125 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 35 | 53 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 480 | A | 2 | |||
| Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 100 A, VGS = 0 | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.003 | Ω | VGS = 10 V, ID = 30 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.006 | Ω | VGS = 10 V, ID = 30 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 30 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = 4.5 V, ID = 20 A | 2 | ||
| Forward Transconductance | gfs | 109 | S | VDS = 15 V, ID = 30 A | 2 | ||
| Input Capacitance | Ciss | 9300 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 180 | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 | ||
| Gate-Source Charge | Qgs | 24.7 | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 | ||
| Gate-Drain Charge | Qgd | 50.4 | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 |
CAD (KiCad official)
- Symbol:
4N0604 TO220-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
4n0604-to220-vb-etched.step/4n0604-to220-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n0604-to220-vb.step/4n0604-to220-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
f1f9f10f2f2d245d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 4N0604 TO220-VB
**VBsemi Elec** · MOSFETs · TO-220AB
4N0604 TO220-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold of 2.0 V to 3.5 V at ID = 250 μA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage rated 60 V and continuous drain current 210 A (package limited to 120 A). |
| 3 | S | passive | Source; continuous source current (diode conduction) is package limited to 120 A and pulsed source current is 480 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 210 | A | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 480 | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS | | | 75 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 281 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 375 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 125 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 40 | °C/W | PCB mount, 1" square PCB (FR-4) | 1 |
| Junction-to-Case (Drain) Thermal Resistance | RthJC | | | 0.4 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS = 0, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 60 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 350 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 120 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Gate Resistance | Rg | 0.5 | 1.1 | 1.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 19 | 29 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Rise Time | tr | | 23 | 35 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 83 | 125 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf | | 35 | 53 | ns | VDD = 30 V, RL = 0.27 Ω, ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Pulsed Current | ISM | | | 480 | A | | 2 |
| Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 100 A, VGS = 0 | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.003 | | Ω | VGS = 10 V, ID = 30 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.006 | | Ω | VGS = 10 V, ID = 30 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.008 | | Ω | VGS = 10 V, ID = 30 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.009 | | Ω | VGS = 4.5 V, ID = 20 A | 2 |
| Forward Transconductance | gfs | | 109 | | S | VDS = 15 V, ID = 30 A | 2 |
| Input Capacitance | Ciss | | 9300 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 180 | | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 |
| Gate-Source Charge | Qgs | | 24.7 | | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 |
| Gate-Drain Charge | Qgd | | 50.4 | | nC | VGS = 10 V, VDS = 30 V, ID = 110 A | 2 |
## CAD (KiCad official)
- Symbol: `4N0604 TO220-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `4n0604-to220-vb-etched.step` / `4n0604-to220-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `4n0604-to220-vb.step` / `4n0604-to220-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/4n0604-to220-vb-datasheet.pdf) (8 pp, sha256 `f1f9f10f2f2d245d`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/4n0604-to220-vb-datasheet.pdf)