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4N03L06-VB

VBsemi Elec · MOSFETs · TO-252

4N03L06-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±20 V (VGS) with a gate-source threshold of 1.0 to 2.5 V at VDS = VGS and ID = 250 µA.
2	D	passive	Drain terminal, rated for a drain-source voltage of 30 V (VDS) with a pulsed drain current of 250 A (IDM).
3	S	passive	Source terminal, with a continuous source-drain diode current (IS) of 90 A at TC = 25 °C, limited by the package current rating stated in note e.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			30	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			60	A	TJ = 175 °C, TC = 70 °C	1
Continuous Drain Current	ID			25.8	A	TA = 25 °C, notes b, c	1
Continuous Drain Current	ID			22	A	TA = 70 °C, notes b, c	1
Pulsed Drain Current	IDM			250	A		1
Single Pulse Avalanche Energy	EAS			94.8	mJ		1
Continuous Source-Drain Diode Current	IS			90	A	TC = 25 °C, note a	1
Continuous Source-Drain Diode Current	IS			3.13	A	TA = 25 °C, notes b, c	1
Maximum Power Dissipation	PD			205	W	TC = 25 °C	1
Maximum Power Dissipation	PD			135	W	TC = 70 °C	1
Maximum Power Dissipation	PD			3.75	W	TA = 25 °C, notes b, c	1
Maximum Power Dissipation	PD			2.63	W	TA = 70 °C, notes b, c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Maximum Junction-to-Ambient	RthJA		32	40	°C/W	t ≤ 10 sec, notes b, d	1
Maximum Junction-to-Ambient (steady state)	RthJA		68	90	°C/W	Steady state, note d	1
Maximum Junction-to-Case	RthJC		0.5	0.6	°C/W	Steady state	1
Drain-Source Breakdown Voltage	VDS	30			V	VGS = 0 V, ID = 250 µA	2
VDS Temperature Coefficient	VDS/TJ		35		mV/°C	ID = 250 µA	2
VGS(th) Temperature Coefficient	VGS(th)/TJ		-7.5		mV/°C		2
Gate-Source Threshold Voltage	VGS(th)	1		2.5	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	90			A	VDS 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.005	Ω	VGS = 10 V, ID = 38.8 A	2
Drain-Source On-State Resistance	RDS(on)			0.006	Ω	VGS = 4.5 V, ID = 37 A	2
Forward Transconductance	gfs		160		S	VDS = 15 V, ID = 38.8 A	2
Gate Resistance	Rg		1.4	2.1	Ω	f = 1 MHz	2
Total Gate Charge	Qg		61	107	nC	VDS = 15 V, VGS = 10 V, ID = 38.8 A	2
Total Gate Charge	Qg		31.5	50	nC	VDS = 15 V, VGS = 4.5 V, ID = 28.8 A	2
Output Capacitance	Coss		525		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		270		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Gate-Source Charge	Qgs		10		nC		2
Gate-Drain Charge	Qgd		6		nC		2
Turn-On Delay Time	td(on)		18	27	ns	VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		11	17	ns	VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		70	105	ns	VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		10	15	ns	VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		55	83	ns	VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		180	270	ns	VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		55	83	ns	VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		12	18	ns	VDD = 15 V, RL = 0.67 Ω, ID 22.5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			120	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			120	A	Pulse test (note a)	2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 22 A	2
Body Diode Reverse Recovery Time	trr		52	78	ns	IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		70.2	105	nC	IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C	2
Reverse Recovery Fall Time	ta		27		ns		2
Reverse Recovery Rise Time	tb		25		ns		2

CAD (KiCad official)

Symbol: 4N03L06-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: 4n03l06-vb-etched.step / 4n03l06-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4n03l06-vb.step / 4n03l06-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 6bbdda3814716ba8, retrieved 2026-10-28, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF