component
4953
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 21d ago |
| viewers | 21d ago |
| 4953-etched.glb | 21d ago |
| 4953-etched.step | 21d ago |
| 4953-hero.glb | 21d ago |
| 4953-hero.overlay.json | 21d ago |
| 4953.glb | 21d ago |
| 4953.kicad_mod | 21d ago |
| 4953.kicad_sym | 21d ago |
| 4953.lbr | 21d ago |
| 4953.step | 21d ago |
| package.json | 21d ago |
| page.json | 14d ago |
| README.md | 14d ago |
4953
Guangdong Hottech · MOSFETs · SO-8
4953 from Guangdong Hottech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of P-channel MOSFET 2; VDS rated -30V, continuous drain current -5.1A. |
| 2 | G2 | input | Gate of P-channel MOSFET 2; VGS maximum ±20V, threshold -1.1V min to -2.1V max. |
| 3 | S1 | passive | Source of P-channel MOSFET 1; VDS rated -30V, continuous drain current -5.1A. |
| 4 | G1 | input | Gate of P-channel MOSFET 1; VGS maximum ±20V, threshold -1.1V min to -2.1V max. |
| 5 | D1 | passive | Drain of P-channel MOSFET 1; RDS(ON) 55mΩ max at VGS=-10V, pulsed current -20A. |
| 6 | D1 | passive | Drain of P-channel MOSFET 1; RDS(ON) 55mΩ max at VGS=-10V, pulsed current -20A. |
| 7 | D2 | passive | Drain of P-channel MOSFET 2; RDS(ON) 55mΩ max at VGS=-10V, pulsed current -20A. |
| 8 | D2 | passive | Drain of P-channel MOSFET 2; RDS(ON) 55mΩ max at VGS=-10V, pulsed current -20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-threshold voltage | VGS(th) | -1.1 | -1.6 | -2.1 | V | VDS=VGS, ID=-250μA | 1 |
| Drain-source on-resistance | RDS(ON) | 43 | 55 | mΩ | VGS=-10V, ID=-5.1A | 1 | |
| Drain-source on-resistance | RDS(ON) | 62 | 90 | mΩ | VGS=-4.5V, ID=-4.2A | 1 | |
| Forward transconductance | gFS | 4 | 7 | S | VDS=-15V, ID=-4.5A | 1 | |
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 1 | |
| Drain-Source breakdown voltage | V(BR)DSS | -30 | -33 | V | VGS=0V, ID=-250μA | 1 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VDS=-24V, VGS=0V | 1 | ||
| Diode forward voltage | VSD | -1.2 | V | IS=-5.1A, VGS=0V | 1 | ||
| Drain-source voltage | VDS | -30 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | -5.1 | A | 1 | |||
| Pulsed drain current | IDM | -20 | A | Note 1 | 1 | ||
| Power dissipation | PD | 2.5 | W | 1 | |||
| Thermal resistance from junction to ambient | RθJA | 50 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
4953 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
4953-etched.step/4953-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4953.step/4953.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (6 pp, sha256
a3e9f47bdf109d50, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).