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4800AGM-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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4800AGM-VB

VBsemi Elec · MOSFETs · SO-8

4800AGM-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; pins 1-3 are tied to source (VDS 30 V, ID 13 A at TC = 25 °C).
2 S passive Source of the N-channel MOSFET; pins 1-3 are tied to source (VDS 30 V, ID 13 A at TC = 25 °C).
3 S passive Source of the N-channel MOSFET; pins 1-3 are tied to source (VDS 30 V, ID 13 A at TC = 25 °C).
4 G input Gate of the N-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of 1.0 V min to 3.0 V max.
5 D passive Drain of the N-channel MOSFET; pins 5-8 are tied to drain (VDS 30 V, RDS(on) 0.008 Ω at VGS = 10 V).
6 D passive Drain of the N-channel MOSFET; pins 5-8 are tied to drain (VDS 30 V, RDS(on) 0.008 Ω at VGS = 10 V).
7 D passive Drain of the N-channel MOSFET; pins 5-8 are tied to drain (VDS 30 V, RDS(on) 0.008 Ω at VGS = 10 V).
8 D passive Drain of the N-channel MOSFET; pins 5-8 are tied to drain (VDS 30 V, RDS(on) 0.008 Ω at VGS = 10 V).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM 45 A TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 39 55 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Foot (Drain) RthJF 25 29 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Forward Transconductance gfs 50 S VDS = 15 V, ID = 10 A 2
Gate Resistance Rg 0.36 1.8 3.6 Ω f = 1 MHz 2
Body Diode Voltage VSD 0.8 1.2 V IS = 9 A 2
Continuous Source-Drain Diode Current IS 10 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Reverse Recovery Time trr 15 30 ns IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.008 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = 4.5 V, ID = 9 A 2

CAD (KiCad official)

  • Symbol: 4800AGM-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: 4800agm-vb-etched.step / 4800agm-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4800agm-vb.step / 4800agm-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 a62c8e7b0b469f55, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF