component
4606-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4606-VB
VBsemi Elec · MOSFETs · SO-8
4606-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1, rated for VDS of 30 V (N-channel) and VGS of ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1, with an absolute maximum gate-source voltage of ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2, rated for VDS of -30 V (P-channel) and VGS of ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2, with an absolute maximum gate-source voltage of ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2, with a drain-source rating of -30 V and a pulsed drain current of 40 A. |
| 6 | D2 | passive | Drain of MOSFET 2, with a drain-source rating of -30 V and a pulsed drain current of 40 A (internally common with pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, with a drain-source rating of 30 V and a pulsed drain current of 40 A. |
| 8 | D1 | passive | Drain of MOSFET 1, with a drain-source rating of 30 V and a pulsed drain current of 40 A (internally common with pin 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Ch | VDS | 30 | V | TA = 25 °C, N-Channel | 1 | ||
| Drain-Source Voltage P-Ch | VDS | -30 | V | TA = 25 °C, P-Channel | 1 | ||
| Gate-Source Voltage N-Ch | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage P-Ch | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current N-Ch | ID | 8 | A | TC = 25 °C, TJ = 150 °C, N-Channel (package limited) | 1 | ||
| Continuous Drain Current P-Ch | ID | -8 | A | TC = 25 °C, TJ = 150 °C, P-Channel (package limited) | 1 | ||
| Pulsed Drain Current N-Ch | IDM | 40 | A | 10 µs pulse width, N-Channel | 1 | ||
| Pulsed Drain Current P-Ch | IDM | -40 | A | 10 µs pulse width, P-Channel | 1 | ||
| Source-Drain Diode Current N-Ch | IS | 2.6 | A | TC = 25 °C, N-Channel | 1 | ||
| Source-Drain Diode Current P-Ch | IS | -2.6 | A | TC = 25 °C, P-Channel | 1 | ||
| Single Pulse Avalanche Current N-Ch | IAS | 10 | A | L = 0.1 mH, N-Channel | 1 | ||
| Single Pulse Avalanche Current P-Ch | IAS | 20 | A | L = 0.1 mH, P-Channel | 1 | ||
| Maximum Power Dissipation N-Ch | PD | 2 | W | TA = 25 °C, N-Channel, note b, c | 1 | ||
| Maximum Power Dissipation P-Ch | PD | 2 | W | TA = 25 °C, P-Channel, note b, c | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance N-Ch | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Junction-to-Ambient Thermal Resistance P-Ch | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Junction-to-Foot Thermal Resistance N-Ch | RthJF | 30 | 40 | °C/W | Steady State, N-Channel | 1 | |
| Junction-to-Foot Thermal Resistance P-Ch | RthJF | 29 | 38 | °C/W | Steady State, P-Channel | 1 | |
| Drain-Source Breakdown Voltage P-Ch | VDS | -30 | V | VGS = 0 V, ID = - 250 µA, P-Ch | 2 | ||
| Gate Threshold Voltage N-Ch | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA, N-Ch | 2 | |
| Gate-Body Leakage N-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Ch | 2 | |
| Gate-Body Leakage P-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Ch | 2 | |
| Zero Gate Voltage Drain Current N-Ch | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V, P-Ch | 2 | ||
| Zero Gate Voltage Drain Current N-Ch hot | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch | 2 | ||
| Zero Gate Voltage Drain Current P-Ch hot | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch | 2 | ||
| On-State Drain Current N-Ch | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Ch | 2 | ||
| On-State Drain Current P-Ch | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V, P-Ch | 2 | ||
| Body Diode Voltage N-Ch | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Ch | 3 | |
| Body Diode Voltage P-Ch | VSD | -0.77 | -1.2 | V | IS = - 2 A, P-Ch | 3 | |
| Drain-Source On-State Resistance P-Ch | RDS(on) | 0.04 | Ω | VGS = - 10 V, ID = - 8 A, P-Ch | 2 | ||
| Forward Transconductance N-Ch | gfs | 27 | S | VDS = 15 V, ID = 6.8 A, N-Ch | 2 | ||
| Forward Transconductance P-Ch | gfs | 25 | S | VDS = - 15 V, ID = - 6.7 A, P-Ch | 2 |
CAD (KiCad official)
- Symbol:
4606-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
4606-vb-etched.step/4606-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4606-vb.step/4606-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
6fd4c4eace8c9dd2, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).