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Contents

README

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4420

TF · MOSFETs · SOP-8

4420 from TF, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, one of three source pins tied internally (VDS max 30V).
2 S passive Source of the N-channel MOSFET, one of three source pins tied internally (VDS max 30V).
3 S passive Source of the N-channel MOSFET, one of three source pins tied internally (VDS max 30V).
4 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±12V and threshold VGS(th) 0.6 V min to 1.1 V typ at ID=250µA.
5 D passive Drain of the N-channel MOSFET, one of four drain pins tied internally (VDSS 30V, ID 12A at TA=25°C).
6 D passive Drain of the N-channel MOSFET, one of four drain pins tied internally (VDSS 30V, ID 12A at TA=25°C).
7 D passive Drain of the N-channel MOSFET, one of four drain pins tied internally (VDSS 30V, ID 12A at TA=25°C).
8 D passive Drain of the N-channel MOSFET, one of four drain pins tied internally (VDSS 30V, ID 12A at TA=25°C).

Key specifications

Parameter Value
Manufacturer TF
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA=25°C (value from product summary VDSS) 1
Gate-Source Voltage VGS -12 12 V TA=25°C 1
Continuous Drain Current ID 12 A TA=25°C 1
Continuous Drain Current ID 8 A TA=70°C 1
Pulsed Drain Current IDM 45 A Note B 1
Power Dissipation PD 3 W TA=25°C 1
Power Dissipation PD 1.8 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 28 40 °C/W t ≤ 10s 1
Junction-to-Ambient Thermal Resistance RθJA 54 70 °C/W Steady-State 1
Junction-to-Lead Thermal Resistance RθJL 21 30 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 30 V ID= 250µA, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.6 1.1 2 V VDS=VGS ID= 250µA 2
On State Drain Current ID(ON) 45 A VGS= 10V, VDS= 5V 2
Static Drain-Source On-Resistance RDS(ON) 10.5 mΩ VGS= 10V, ID= 12A 2
Static Drain-Source On-Resistance RDS(ON) 12 mΩ VGS= 4.5V, ID= 8A 2
Diode Forward Voltage VSD 0.76 1 V IS= 3A , VGS=0V 2
Maximum Body-Diode Continuous Current IS 5 A 2
Forward Transconductance gFS 9 S VDS= 15V, ID = 12A 2
Input Capacitance Ciss 3656 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 256 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 168 pF VGS=0V, VDS=25V, f=1MHz 2
Gate Resistance Rg 1.1 Ω VGS=0V, VDS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: 4420
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 4420-etched.step / 4420-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4420.step / 4420.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TF datasheet (5 pp, sha256 7cdfe2181ed8c276, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF