main
History Download
Ray 4410: specified limits as data (metadata.characteristics, 20 rows from the datasheet) 0729172 14d ago

4410

KUU · MOSFETs · SOP-8

4410 from KUU, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel trench MOSFET; the absolute maximum VDS is 30 V and the continuous ID is 15 A at TC=25℃.
2 S passive Source terminal of the N-channel trench MOSFET; the absolute maximum VDS is 30 V and the continuous ID is 15 A at TC=25℃.
3 S passive Source terminal of the N-channel trench MOSFET; the absolute maximum VDS is 30 V and the continuous ID is 15 A at TC=25℃.
4 G input Gate terminal; the gate-source voltage is rated ±20 V absolute maximum.
5 D passive Drain terminal; the drain-source voltage is rated 30 V and the pulsed drain current IDM is 45 A.
6 D passive Drain terminal; the drain-source voltage is rated 30 V and the pulsed drain current IDM is 45 A.
7 D passive Drain terminal; the drain-source voltage is rated 30 V and the pulsed drain current IDM is 45 A.
8 D passive Drain terminal; the drain-source voltage is rated 30 V and the pulsed drain current IDM is 45 A.

Key specifications

Parameter Value
Manufacturer KUU
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 15 A TC=25℃ 1
Continuous Drain Current ID 11 A TC=75℃ 1
Continuous Drain Current ID 9 A TC=100℃ 1
Pulsed Drain Current IDM 45 A 1
Total Power Dissipation PD 35 W TC=25℃ 1
Total Power Dissipation PD 0.8 W TA=25℃ 1
Operating Junction Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 35 mJ 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(TH) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=30 VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Static Drain-source On Resistance RDS(ON) 8.3 10 mΩ VGS=10V, ID=15A 2
Source-drain voltage VSD 1.2 V Is=10A 2
Thermal resistance, junction - case RthJC 4.5 °C/W 2
Thermal resistance, junction - ambient RthJA 60 °C/W 2
Soldering temperature, wavesoldering Tsold 265 ℃ for 8 s 2

CAD (KiCad official)

  • Symbol: 4410
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 4410-etched.step / 4410-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 4410.step / 4410.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KUU datasheet (6 pp, sha256 8573c628d4a5a79b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF