component
4228SS-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4228SS-VB
VBsemi Elec · MOSFETs · SO-8
4228SS-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of N-channel MOSFET 1, rated for a source-drain diode continuous current of 2.25 A at TC = 25 °C. |
| 2 | G1 | input | Gate of N-channel MOSFET 1, with gate-source voltage limited to ±20 V in the absolute maximum ratings. |
| 3 | S2 | passive | Source terminal of N-channel MOSFET 2, rated for a source-drain diode continuous current of 2.25 A at TC = 25 °C. |
| 4 | G2 | input | Gate of N-channel MOSFET 2, with gate-source voltage limited to ±20 V in the absolute maximum ratings. |
| 5 | D2 | passive | Drain terminal of N-channel MOSFET 2, with drain-source voltage rated 30 V. |
| 6 | D2 | passive | Drain terminal of N-channel MOSFET 2, with drain-source voltage rated 30 V. |
| 7 | D1 | passive | Drain terminal of N-channel MOSFET 1, with drain-source voltage rated 30 V. |
| 8 | D1 | passive | Drain terminal of N-channel MOSFET 1, with drain-source voltage rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TA = 25 °C) | ID | 6.2 | A | TA = 25 °C, b, c | 1 | ||
| Continuous Drain Current (TA = 70 °C) | ID | 5.2 | A | TA = 70 °C, c | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Continuous Source-Drain Diode Current (TC = 25 °C) | IS | 2.25 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 5 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.25 | mJ | 1 | |||
| Maximum Power Dissipation (TC = 25 °C) | PD | 2.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (TC = 70 °C) | PD | 1.77 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation (TA = 25 °C) | PD | 1.78 | W | TA = 25 °C, b, c | 1 | ||
| Maximum Power Dissipation (TA = 70 °C) | PD | 1.14 | W | TA = 70 °C, b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 58 | 70 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 38 | 45 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.026 | Ω | VGS = 4.5 V, ID = 4 A | 2 | ||
| Gate Resistance | Rg | 0.8 | 4.3 | 8.6 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 3.7 | 5.6 | nC | VDS = 15 V, VGS = 4.5 V, ID = 5 A | 2 | |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) | 12 | 24 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time (VGEN = 4.5 V) | tr | 55 | 100 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) | 11 | 22 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = 4.5 V) | tf | 8 | 16 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time (VGEN = 10 V) | td(on) | 48 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | ||
| Rise Time (VGEN = 10 V) | tr | 9 | 18 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) | 10 | 20 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = 10 V) | tf | 6 | 12 | ns | VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 2 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 11 | 20 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
4228SS-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
4228ss-vb-etched.step/4228ss-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4228ss-vb.step/4228ss-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
eea6fd8a91e98fa8, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).