component
40N06
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown40N06
UMW · MOSFETs · TO-252
40N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 60V N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS), and VGS(th) is 1 to 2.5 V. |
| 2 | D | passive | DRAIN terminal of the MOSFET, rated for VDS = 60 V and 40 A continuous drain current at TC = 25°C. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for the gate-source voltage (VGS rated ±20 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, IDS=250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, IDS=250µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 14 | mΩ | VGS=10V, IDS=30A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 16 | mΩ | VGS=4.5V, IDS=20A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 40 | A | TC=25°C | 1 | ||
| Drain Current-Continuous | ID | 29 | A | TC=100°C | 1 | ||
| Drain Current-Pulsed | IDM | 160 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy | EAS | 64 | mJ | Note 4: L=0.5mH, VDD=10V, VG=10V, VGATE=20V, Start TJ=25°C | 1 | ||
| Maximum Power Dissipation | PD | 75 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.4 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
40N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
40n06-etched.step/40n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);40n06.step/40n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
214235ff068ef732, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).