# 3P10

**HL** · MOSFETs · SOT-23-3L

3P10 from HL, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel trench MOSFET, rated for a gate-source voltage of ±20 V (VGS). |
| 2 | D | passive | Drain of the MOSFET, rated for a drain-source voltage of -100 V with continuous drain current of -0.75 A at Ta=25℃ and -3 A at Tc=25℃. |
| 3 | S | passive | Source of the MOSFET, with body diode continuous forward current stated as -3 A (Is, VG=VD=0V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | V(br)dss | -100 |  |  | V | Id = -250μA, Vgs = 0V | 2 |
| Zero-Gate Voltage Drain Current (Tj=25℃) | Idss |  |  | -1 | μA | Vds = -80V, Vgs = 0V | 2 |
| Zero-Gate Voltage Drain Current (Tj=80℃) | Idss |  |  | -30 | μA | Vds = -80V, Vgs = 0V | 2 |
| Gate to Source Leakage Current | Igss | -100 |  | 100 | nA | Vgs = ±20V，Vds = 0V | 2 |
| Gate Threshold Voltage | Vgs(th) | -1.2 | -1.8 | -2.5 | V | Vds=Vgs, Id=-250μA | 2 |
| Static Drain to Source On-State Resistance | Rds(on) |  | 180 | 220 | mΩ | Id = -3A, Vgs = -10V | 2 |
| Static Drain to Source On-State Resistance | Rds(on) |  | 210 | 225 | mΩ | Id = -2A, Vgs = -4.5V | 2 |
| Diode Forward Voltage | Vsd |  |  | -1.2 | V | Is = -20A, Vgs = 0V | 2 |
| Continuous Diode Forward Current | Is |  |  | -3 | A | VG=VD=0V, Force Current | 2 |
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | lD |  |  | -0.75 | A | VGS @ -10V; Ta =25℃ | 1 |
| Continuous Drain Current | lD |  |  | -0.6 | A | VGS @ -10V; Ta =100℃ | 1 |
| Continuous Drain Current | lD |  |  | -3 | A | VGS @ -10V; Tc =25℃ | 1 |
| Continuous Drain Current | lD |  |  | -1.2 | A | VGS @ -10V; Tc =25℃ | 1 |
| Pulsed Drain Current | lDM |  |  | -6 | A |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 14.5 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | -4.5 | A |  | 1 |
| Power Dissipation | Pd |  |  | 2 | W | Ta =25℃ | 1 |
| Power Dissipation | Pd |  |  | 10 | W | Tc =25℃ | 1 |
| Junction Temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Junction to case thermal resistance | RθJC |  |  | 8 | ℃/W |  | 2 |
| Junction to ambient thermal resistance | RθJA |  |  | 72 | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `3P10`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `3p10-etched.step` / `3p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `3p10.step` / `3p10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HL datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603362108181016576) (7 pp, sha256 `00e1636e5465addc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/3p10-datasheet.pdf)