component
3N80L-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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3N80L-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252-2
3N80L-TN3-R from UTC Unisonic Tech, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 3N80 N-channel power MOSFET; gate-source voltage is rated ±30 V (VGSS), with gate-source breakdown voltage BVGSO of 30 V minimum at IGS = ±1 mA. |
| 2 | D | passive | Drain terminal of the MOSFET; drain-source voltage is rated 800 V (VDSS) and continuous drain current is 3 A, on a TO-252 package with 50 W power dissipation and 110 °C/W junction-to-ambient thermal resistance. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no pin-specific limit for this pin, and the ±30 V gate-source rating is referenced to it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage Current | IGSS | -10 | 10 | μA | VGS=±30V, VDS=0V | 4 | |
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 3.2 | 4.2 | Ω | VGS=10V, ID=1.5A | 4 | |
| Drain-Source Voltage (VGS=0V) | VDSS | 800 | V | VGS=0V | 3 | ||
| Drain-Gate Voltage | VDGR | 800 | V | RG=20kΩ | 3 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Gate-Source Breakdown Voltage | BVGSO | 30 | V | IGS=±1mA | 3 | ||
| Avalanche Current | IAR | 3 | A | Pulse width limited by TJ(MAX) | 3 | ||
| Continuous Drain Current | ID | 3 | A | 3 | |||
| Pulsed Drain Current | IDM | 10 | A | 3 | |||
| Single Pulse Avalanche Energy | EAS | 170 | mJ | Starting TJ=25 °C, ID=IAR, VDD=50V | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX) | 3 | ||
| Power Dissipation (TO-252) | PD | 50 | W | TO-251/TO-251S4/TO-252 group as printed | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient (TO-252) | θJA | 110 | °C/W | TO-251/TO-251S4/TO-252 group as printed | 3 | ||
| Junction to Case (TO-252) | θJC | 2.5 | °C/W | TO-251/TO-251S4/TO-252 group as printed | 3 |
CAD (KiCad official)
- Symbol:
3N80L-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
3n80l-tn3-r-etched.step/3n80l-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3n80l-tn3-r.step/3n80l-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (8 pp, sha256
553f7060ce2fb997, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).