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3DD4617HZ

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Jilin Sino-Microelectronics Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD4617HZ

Jilin Sino-Microelectronics · Bipolar (BJT) · TO-220

3DD4617HZ from Jilin Sino-Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; drive terminal, with IC=4A requiring IB=0.8A for VCE(sat) test and VEBO max 9 V.
2 C passive Collector; VCEO 450 V, VCES 800 V, IC 4.0 A DC (8 A pulse), also connected to the tab per the package drawing.
3 E passive Emitter; main current return terminal of the NPN transistor, VEBO max 9 V relative to base.

Key specifications

Parameter Value
Manufacturer Jilin Sino-Microelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (VBE=0) VCES 800 V VBE=0, Tc=25℃ 2
Collector-Emitter Voltage (IB=0) VCEO 450 V IB=0, Tc=25℃ 2
Emitter-Base Voltage VEBO 9 V Tc=25℃ 2
Collector Current (DC) IC 4 A Tc=25℃ 2
Collector Current (pulse) ICP 8 A Tc=25℃ 2
Total Dissipation (TO-220/TO-220C) PC 75 W Tc=25℃, TO-220/TO-220C 2
Junction Temperature Tj 150 ℃ Tc=25℃ 2
Storage Temperature Tstg -55 150 ℃ Tc=25℃ 2
Thermal Resistance Junction Case TO-220/TO-220C Rth(j-c) 1.67 ℃/W TO-220/TO-220C 2
Collector-Emitter Breakdown Voltage V(BR)CEO 450 500 V IC=5mA,IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO 800 900 V IC=1mA,IE=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 9 14 V IE=1mA,IC=0 2
Collector Cutoff Current ICBO 0.1 mA VCB=800V, IE=0 2
Collector Cutoff Current ICEO 1 mA VCE=450V,IB=0 2
Emitter Cutoff Current IEBO 0.1 mA VEB=9V, IC=0 2
DC Current Gain hFE 20 30 40 VCE =5V, IC=500mA 2
DC Current Gain hFE 5 9.5 VCE=5V, IC=4.0A 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 1.3 V IC=4A, IB=0.8A 2
Base-Emitter Saturation Voltage VBE(sat) 1.1 1.5 V IC=4A, IB=0.8A 2
Fall Time Tf 0.7 uS Vcc=24V Ic=2A IB1=-IB2=0.4A 2
Transition Frequency fT 5 MHz VCE=10V, IC=0.5A 2

CAD (KiCad official)

  • Symbol: 3DD4617HZ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: 3dd4617hz-etched.step / 3dd4617hz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd4617hz.step / 3dd4617hz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino-Microelectronics datasheet (11 pp, sha256 2324ee588d0d644e, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF