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Contents

README

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3DD4613H-92-FJ

Jilin Sino-Microelectronics · Bipolar Transistors - BJT · TO-92-3

3DD4613H-92-FJ from Jilin Sino-Microelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter terminal (pin 1) of the NPN transistor; VEBO max 9 V and V(BR)EBO min 9 V at IE=1 mA.
2 C passive Collector terminal (pin 2); VCEO 500 V, VCES 900 V, IC 1.5 A DC and 3.0 A pulsed maximum.
3 B passive Base terminal (pin 3) of the NPN transistor; drives IC up to 1.5 A, with VBE(sat) max 1.5 V at IC=1.0 A, IB=250 mA.

Key specifications

Parameter Value
Manufacturer Jilin Sino-Microelectronics
Package TO-92-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (VBE=0) VCES 900 V VBE=0, Tc=25℃ 3
Collector-Emitter Voltage (IB=0) VCEO 500 V IB=0, Tc=25℃ 3
Emitter-Base Voltage VEBO 9 V Tc=25℃ 3
Collector Current (DC) IC 1.5 A Tc=25℃ 3
Collector Current (pulse) ICP 3 A Tc=25℃ 3
Total Dissipation (TO-92-FJ) PC 1 W Tc=25℃ 3
Junction Temperature Tj 150 ℃ Tc=25℃ 3
Storage Temperature Tstg -55 150 ℃ Tc=25℃ 3
Thermal Resistance Junction Ambient TO-92-FJ Rth(j-a) 125 ℃/W 3
Collector-Emitter Breakdown Voltage V(BR)CEO 500 560 V IC=10mA,IB=0 3
Collector-Base Breakdown Voltage V(BR)CBO 900 1000 V IC=1mA,IE=0 3
Emitter-Base Breakdown Voltage V(BR)EBO 9 14 V IE=1mA,IC=0 3
Collector Cutoff Current ICBO 1 μA VCB=900V, IE=0 3
Collector Cutoff Current ICEO 10 μA VCE=500V,IB=0 3
Emitter Cutoff Current IEBO 0.5 μA VEB=7V, IC=0 3
DC Current Gain Hfe 20 26 VCE=5V, IC=10Ma 3
DC Current Gain Hfe 20 30 40 VCE=5V, IC=0.2A 3
DC Current Gain Hfe 5 8 20 VCE=5V, IC=1.0A 3
Collector-Emitter Saturation Voltage VCE(sat) 0.7 1.5 V IC=1.0A, IB=0.25A 3
Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.8 V IC=0.5A, IB=0.1A 3
Base-Emitter Saturation Voltage VBE(sat) 1 1.5 V IC=1.0A, IB=250Ma 3
Fall Time tf 1 μs VCC=125V IC=0.1A, IB1=-IB2=0.02A 3
Storage Time ts 10 us VCC=125V IC=0.1A, IB1=-IB2=0.02A 3
Transition Frequency Ft 4 MHz VCE=10V, IC=0.1A 3

CAD (KiCad official)

  • Symbol: 3DD4613H-92-FJ
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 3dd4613h-92-fj-etched.step / 3dd4613h-92-fj-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd4613h-92-fj.step / 3dd4613h-92-fj.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino-Microelectronics datasheet (8 pp, sha256 a28800ca2a786fab, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF