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3DD4251T

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Jilin Sino-Microelectronics Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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3DD4251T

Jilin Sino-Microelectronics · Bipolar Transistors - BJT · TO-92-3

3DD4251T from Jilin Sino-Microelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 9 V, with V(BR)EBO min 9 V at IE=1 mA.
2 C passive Collector; VCEO 400 V, VCES 700 V, IC 0.5 A DC and 1 A pulse.
3 E passive Emitter of the NPN transistor, which is the common return terminal.

Key specifications

Parameter Value
Manufacturer Jilin Sino-Microelectronics
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (VBE=0) VCES 700 V VBE=0 2
Collector-Emitter Voltage (IB=0) VCEO 400 V IB=0 2
Emitter-Base Voltage VEBO 9 V 2
Collector Current (DC) IC 0.5 A 2
Collector Current (pulse) ICP 1 A 2
Total Dissipation (TO-92/TO-92-FJ) PC 1 W Tc=25℃ 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Tstg -55 150 ℃ 2
Thermal Resistance Junction Ambient TO-92/TO-92-FJ Rth(j-a) 125 ℃/W 2
Collector-Emitter Breakdown Voltage V(BR)CEO 400 440 V Ic=10mA,IB=0 2
Collector-Base Breakdown Voltage V(BR)CBO 700 780 V Ic=1mA,IE=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 9 15 V IE=1mA,Ic=0 2
Collector Cutoff Current ICBO 5 μA VCB=700V, IE=0 2
Collector-Emitter Cutoff Current ICEO 10 μA VCE=400V,IB=0 2
Emitter Cutoff Current IEBO 5 μA VEB=9V, IC=0 2
DC Current Gain hFE 19 25 VCE=10V, IC=20mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 1 V IC=0.1A, IB=10mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.8 1.2 V IC=0.05A, IB=5mA 2
Storage Time ts 1 1.5 2 μS IC=0.1A 2

CAD (KiCad official)

  • Symbol: 3DD4251T
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 3dd4251t-etched.step / 3dd4251t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd4251t.step / 3dd4251t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino-Microelectronics datasheet (6 pp, sha256 5531d6e6cac3b91e, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF