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3DD4243DY

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Jilin Sino-Microelectronics Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD4243DY

Jilin Sino-Microelectronics · Bipolar (BJT) · TO-92-3

3DD4243DY from Jilin Sino-Microelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the datasheet gives an emitter-base voltage rating VEBO of 9 V and an emitter-base breakdown V(BR)EBO of at least 9 V.
2 C passive Collector; the datasheet gives VCEO of 400 V, VCES of 700 V, and a DC collector current of 2.0 A (4.0 A pulse).
3 E passive Emitter; the datasheet shows an anti-parallel diode between the emitter and the collector in the symbol.

Key specifications

Parameter Value
Manufacturer Jilin Sino-Microelectronics
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (VBE=0) VCES 700 V Tc=25℃, VBE=0 2
Collector-Emitter Voltage (IB=0) VCEO 400 V Tc=25℃, IB=0 2
Emitter-Base Voltage VEBO 9 V Tc=25℃ 2
Collector Current (DC) IC 2 A Tc=25℃ 2
Collector Current (pulse) ICP 4 A Tc=25℃ 2
Total Dissipation (TO-92) PC 1 W Tc=25℃, TO-92 2
Junction Temperature Tj 150 ℃ Tc=25℃ 2
Storage Temperature Tstg -55 150 ℃ Tc=25℃ 2
Collector-Emitter breakdown voltage V(BR)CEO 400 460 V Ic=10mA,IB=0 2
Collector-Base breakdown voltage V(BR)CBO 700 800 V Ic=1mA,IE=0 2
Emitter-Base breakdown voltage V(BR)EBO 9 16 V IE=1mA,Ic=0 2
Collector cut-off current ICBO 5 μA VCB=700V, IE=0 2
Collector-emitter cut-off current ICEO 10 μA VCE=400V,IB=0 2
Emitter cut-off current IEBO 5 μA VEB=9V, IC=0 2
DC current gain hFE 19 22 25 VCE=5V, IC=200mA 2
DC current gain hFE 4 8 VCE=5V, IC=2.0A 2
Collector-emitter saturation voltage VCE(sat) 0.8 1.1 V IC=2.0A, IB=0.4A 2
Base-emitter saturation voltage VBE(sat) 1 1.2 V IC=1.0A, IB=0.2A 2
Fall time tf 0.7 μS VCC=24V IC=0.25A,IB1=-IB2=0.05A 3
Storage time ts 5 μS VCC=24V IC=0.25A,IB1=-IB2=0.05A 3
Transition frequency fT 4 MHz VCE=10V, Ic=0.1A 3
Thermal Resistance Junction Ambient TO-92 Rth(j-a) 125 ℃/W TO-92 3

CAD (KiCad official)

  • Symbol: 3DD4243DY
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 3dd4243dy-etched.step / 3dd4243dy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd4243dy.step / 3dd4243dy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino-Microelectronics datasheet (8 pp, sha256 462fde04f61cb6be, retrieved 2026-10-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF