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3DD4242DT-92

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Jilin Sino Microelectronics Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD4242DT-92

Jilin Sino Microelectronics · Bipolar (BJT) · TO-92-3

3DD4242DT-92 from Jilin Sino Microelectronics, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage VEBO max 9 V, collector current IC 1.5 A DC (3.0 A pulse).
2 C passive Collector; VCEO 400 V, VCES 700 V, IC 1.5 A DC and ICP 3.0 A pulse, with an anti-parallel diode to the emitter shown in the symbol.
3 E passive Emitter; common terminal of the NPN transistor, with an anti-parallel diode to the collector shown in the symbol.

Key specifications

Parameter Value
Manufacturer Jilin Sino Microelectronics
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 700 V Tc=25℃; VBE=0 2
Collector-Emitter Voltage VCEO 400 V Tc=25℃; IB=0 2
Emitter-Base Voltage VEBO 9 V Tc=25℃ 2
Collector Current (DC) IC 1.5 A Tc=25℃ 2
Collector Current (pulse) ICP 3 A Tc=25℃ 2
Total Dissipation (TO-92/SOT-89) PC 1 W Tc=25℃; TO-92/SOT-89 2
Junction Temperature Tj 150 ℃ Tc=25℃ 2
Storage Temperature Tstg -55 150 ℃ 2
Thermal Resistance Junction Ambient Rth(j-a) 125 ℃/W TO-92/ TO-92-F1/SOT-89 3
Collector-Emitter Breakdown Voltage V(BR)CEO 400 470 V Ic=10mA, IB=0 3
Collector-Base Breakdown Voltage V(BR)CBO 700 800 V Ic=1mA, IE=0 3
Emitter-Base Breakdown Voltage V(BR)EBO 9 16 V IE=1mA, Ic=0 3
Collector Cutoff Current ICBO 5 μA VCB=700V, IE=0 3
Collector Cutoff Current ICEO 10 μA VCE=400V, IB=0 3
Emitter Cutoff Current IEBO 5 μA VEB=7V, IC=0 3
DC Current Gain hFE 19 22 25 - VCE=10V, IC=100mA 3
DC Current Gain hFE 3 7 - VCE=5V, IC=1.5A 3
Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.8 V IC=0.5A, IB=100mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 1.2 V IC=0.5A, IB=100mA 3
Storage Time ts 1 4 μS IC=0.25A 3
Transition Frequency fT 4 MHz VCE=10V, Ic=0.1A 3

CAD (KiCad official)

  • Symbol: 3DD4242DT-92
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: 3dd4242dt-92-etched.step / 3dd4242dt-92-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd4242dt-92.step / 3dd4242dt-92.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jilin Sino Microelectronics datasheet (9 pp, sha256 d1634e2289b1e56e, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF