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3DD13003B-TA

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD13003B-TA

Changjing · Bipolar (BJT) · TO-92

3DD13003B-TA from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the NPN power transistor; the emitter-base voltage rating is VEBO = 9 V.
2 COLLECTOR passive Collector terminal of the NPN power transistor; ratings are VCBO = 700 V, VCEO = 400 V and continuous collector current IC = 1.5 A.
3 BASE passive Base terminal of the NPN power transistor; saturation is specified at IC = 0.5 A with IB = 0.1 A and at IC = 1.5 A with IB = 0.5 A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 700 V Ta=25℃ 1
Collector-emitter voltage VCEO 400 V Ta=25℃ 1
Emitter-base voltage VEBO 9 V Ta=25℃ 1
Collector current - continuous IC 1.5 A Ta=25℃ 1
Collector power dissipation PC 0.9 W Ta=25℃ 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 700 V IC= 1mA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 400 V IC= 10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 9 V IE= 1mA, IC=0 2
Collector cut-off current (base open, ICBO) ICBO 100 µA VCB= 700V, IE=0 2
Collector cut-off current (emitter open, ICEO) ICEO 50 µA VCE= 400V, IB=0 2
Emitter cut-off current IEBO 10 µA VEB= 7V, IC=0 2
DC current gain hFE 20 40 VCE= 10V, IC= 0.4 A 2
Collector-emitter saturation voltage VCE(sat)1 3 V IC=1.5A, IB= 0.5A 2
Collector-emitter saturation voltage VCE(sat)2 0.8 V IC=0.5A, IB= 0.1A 2
Base-emitter saturation voltage VBE(sat) 1 V IC=0.5A, IB=0.1A 2
Transition frequency fT 4 MHz VCE=10V, IC=100mA, f =1MHz 2
Fall time tf 0.7 µs IC=1A 2
Storage time ts 4 µs IB1=-IB2=0.2A 2

CAD (KiCad official)

  • Symbol: 3DD13003B-TA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 3dd13003b-ta-etched.step / 3dd13003b-ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd13003b-ta.step / 3dd13003b-ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (5 pp, sha256 a5c3bc125585186e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF