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3DD13003

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3DD13003

Changjing · Bipolar (BJT) · TO-252-2(DPAK)

3DD13003 from Changjing, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN power switching transistor; it is pin 1 in the TO-252-2L pin assignment on the datasheet's package page.
2 COLLECTOR passive Collector terminal of the NPN transistor, rated 700 V VCBO, 400 V VCEO and 1.5 A continuous collector current; it is pin 2 in the TO-252-2L pin assignment.
3 EMITTER passive Emitter terminal of the NPN transistor, rated 9 V VEBO; it is pin 3 in the TO-252-2L pin assignment.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 700 V 1
Collector-Emitter Voltage VCEO 400 V 1
Emitter-Base Voltage VEBO 9 V 1
Collector Current - Continuous IC 1.5 A 1
Collector Dissipation PC 1.25 W TA=25 °C 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Collector-base breakdown voltage V(BR)CBO 700 V Ic=1mA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 400 V Ic=10 mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 9 V IE=1mA, IC=0 1
Collector cut-off current ICBO 1 mA VCB=700V, IE=0 1
Collector cut-off current ICEO 0.5 mA VCE=400V, IB=0 1
Emitter cut-off current IEBO 1 mA VEB=9 V, IC=0 1
DC current gain hFE(1) hFE(1) 8 40 VCE=5 V, IC=0.5 A 1
DC current gain hFE(2) hFE(2) 5 VCE=5 V, IC=1.5A 1
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=1A, IB=250 mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=1A, IB=250mA 1
Base-emitter voltage VBE 3 V IE=2A 1
Transition frequency fT 5 MHz VCE=10V, Ic=100mA, f=1MHz 1
Fall time tf 0.5 µs 1
Storage time ts 2 4 µs IC=250mA; IC=1A, IB1=-IB2=0.2A, VCC=100V 1

CAD (KiCad official)

  • Symbol: 3DD13003
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: 3dd13003-etched.step / 3dd13003-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3dd13003.step / 3dd13003.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 84daed3a2eca4747, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF