# 3DD13002B

**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · TO-92

3DD13002B from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives no separate electrical limit for this pin beyond the device maximum ratings (VEBO 6 V, IC 0.8 A continuous). |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet rates collector-emitter voltage at 400 V and collector-base voltage at 600 V, with 0.8 A continuous collector current. |
| 3 | BASE | input | Base terminal of the NPN transistor that controls the switching; the datasheet gives VBE(sat) of 1.1 V at IC=200mA, IB=40mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 600 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 400 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector Current -Continuous | IC |  |  | 0.8 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 0.9 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 |  |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 600 |  |  | V | IC=100μA,IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 400 |  |  | V | IC=1mA,IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE= 100μA,IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 100 | µA | VCB= 600V,IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 100 | µA | VEB= 6 V, IC=0 | 1 |
| DC current gain | hFE1 | 9 |  | 40 |  | VCE= 10 V, IC=200mA | 1 |
| DC current gain | hFE2 | 5 |  |  |  | VCE= 10 V, IC=0.25mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=200mA, IB=40mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.1 | V | IC=200mA, IB=40mA | 1 |
| Transition frequency | fT |  | 5 |  | MHz | VCE=10V, IC=100mA, f =1MHz | 1 |
| Fall time | tf |  |  | 0.5 | µs |  | 1 |
| Storage time | ts |  |  | 2.5 | µs | IC=1A, IB1=-IB2=0.2A, VCC=100V | 1 |

## CAD (KiCad official)

- Symbol: `3DD13002B`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `3dd13002b-etched.step` / `3dd13002b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `3dd13002b.step` / `3dd13002b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/3dd13002b-datasheet.pdf) (2 pp, sha256 `dc7882da82c7d542`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/3dd13002b-datasheet.pdf)