component
35N10
Public Made by Adomby adom
HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown35N10
HL · MOSFETs · TO-252
35N10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage VGS is rated ±20 V. |
| 2 | D | passive | Drain of the MOSFET; rated for VDS of 100 V and 35 A continuous drain current at TC = 25℃. |
| 3 | S | passive | Source of the MOSFET; continuous source current IS is rated 35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Continuous Drain Current | ID | 35 | A | VGS@10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 18 | A | VGS@10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 105 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | TJ=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω, IAS=10A | 1 | ||
| Avalanche Current | IAS | 10 | A | 1 | |||
| Total Power Dissipation | PD | 42 | W | TC = 25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-case | RθJC | 3.6 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250uA, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=100V, VGS=0V, TJ=100℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.2 | 1.6 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 25 | 32.5 | mΩ | VGS=10V, ID=9A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 26 | 36 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Continuous Source Current | IS | 35 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 17A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
35N10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
35n10-etched.step/35n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);35n10.step/35n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (6 pp, sha256
dbb57de820e9cad3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).