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3439KDW

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HXY MOSFET MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3439KDW

HXY MOSFET · MOSFETs · SOT-363

3439KDW from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (20V VDS, 0.75A continuous drain current).
2 G1 input Gate of the N-channel MOSFET (VGS rated ±12V, threshold 0.35 to 1.1V).
3 D2 passive Drain of the P-channel MOSFET (VDS -20V, -0.66A continuous drain current).
4 S2 passive Source of the P-channel MOSFET (VDS -20V, -0.66A continuous drain current).
5 G2 input Gate of the P-channel MOSFET (VGS rated ±12V, threshold -0.35 to -1.1V).
6 D1 passive Drain of the N-channel MOSFET (VDS 20V, 0.75A continuous drain current).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage (N-channel) VDS 20 V 1
Drain-source voltage (P-channel) VDS -20 V 1
Gate-source voltage (N-channel) VGS -12 12 V 1
Gate-source voltage (P-channel) VGS -12 12 V 1
Continuous drain current (N-channel) ID 0.75 A TA=25℃, VGS @ 10V 1
Continuous drain current (P-channel) ID -0.66 A TA=25℃, VGS @ 10V 1
Pulsed drain current (N-channel) IDM 1.8 A 1
Pulsed drain current (P-channel) IDM -1.2 A 1
Storage temperature range (N-channel and P-channel columns) TSTG -55 150 ℃ 1
Operating junction temperature range (N-channel and P-channel columns) TJ -55 150 ℃ 1
Thermal resistance junction-ambient RθJA 833 ℃/W Surface mounted on FR4 board, minimum recommended pad size (note 1) 1
Drain-source breakdown voltage (N-channel) V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current (N-channel) IDSS 1 µA VDS =20V,VGS = 0V 2
Gate-body leakage current (N-channel) IGSS -20 20 uA VGS =±10V, VDS = 0V 2
Gate threshold voltage (N-channel) VGS(th) 0.35 1.1 V VDS =VGS, ID =250µA 2
Drain-source on-resistance (N-channel, VGS=4.5V) RDS(on) 380 mΩ VGS =4.5V, ID =0.65A 2
Drain-source on-resistance (N-channel, VGS=2.5V) RDS(on) 450 mΩ VGS =2.5V, ID =0.55A 2
Drain-source on-resistance (N-channel, VGS=1.8V) RDS(on) 800 mΩ VGS =1.8V, ID =0.45A 2
Diode forward voltage (N-channel) VSD 1.2 V IS=0.15A, VGS = 0V 2
Input capacitance (N-channel) Ciss 79 120 pF VDS =16V,VGS =0V,f =1MHz 2
Output capacitance (N-channel) Coss 13 20 pF VDS =16V,VGS =0V,f =1MHz 2
Reverse transfer capacitance (N-channel) Crss 9 15 pF VDS =16V,VGS =0V,f =1MHz 2
Turn-on delay time (N-channel) td(on) 6.7 ns VGS=4.5V,VDS=10V, ID=500mA,RGEN=10Ω 2
Turn-on rise time (N-channel) tr 4.8 ns VGS=4.5V,VDS=10V, ID=500mA,RGEN=10Ω 2
Turn-off delay time (N-channel) td(off) 17.3 ns VGS=4.5V,VDS=10V, ID=500mA,RGEN=10Ω 2
Turn-off fall time (N-channel) tf 7.4 ns VGS=4.5V,VDS=10V, ID=500mA,RGEN=10Ω 2
Drain-source breakdown voltage (P-channel) V(BR)DSS -20 V VGS = 0V, ID =-250µA 2
Zero gate voltage drain current (P-channel) IDSS -1 µA VDS =-20V,VGS = 0V 2
Gate-body leakage current (P-channel) IGSS -20 20 uA VGS =±10V, VDS = 0V 2
Gate threshold voltage (P-channel) VGS(th) -1.1 -0.35 V VDS =VGS, ID =-250µA 2
Drain-source on-resistance (P-channel, VGS=-4.5V) RDS(on) 570 mΩ VGS =-4.5V, ID =-1A 2
Drain-source on-resistance (P-channel, VGS=-2.5V) RDS(on) 700 mΩ VGS =-2.5V, ID =-0.8A 2
Drain-source on-resistance (P-channel, VGS=-1.8V) RDS(on) 950 mΩ VGS =-1.8V, ID =-0.5A 2
Diode forward voltage (P-channel) VSD -1.2 V IS=-0.5A, VGS = 0V 2
Input capacitance (P-channel) Ciss 113 170 pF VDS =-16V,VGS =0V,f =1MHz 2
Output capacitance (P-channel) Coss 15 25 pF VDS =-16V,VGS =0V,f =1MHz 2
Reverse transfer capacitance (P-channel) Crss 9 15 pF VDS =-16V,VGS =0V,f =1MHz 2
Turn-on delay time (P-channel) td(on) 9 ns VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10Ω 2
Turn-on rise time (P-channel) tr 5.8 ns VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10Ω 2
Turn-off delay time (P-channel) td(off) 32.7 ns VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10Ω 2
Turn-off fall time (P-channel) tf 20.3 ns VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10Ω 2

CAD (KiCad official)

  • Symbol: 3439KDW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: 3439kdw-etched.step / 3439kdw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3439kdw.step / 3439kdw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 cb30bd6806d63449, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF