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3415E

Public Made by Adom

by adom

HL MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3415E

HL · MOSFETs · SOT-23

3415E from HL, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; the datasheet limits gate-source voltage VGS to ±10 V.
2 S passive Source terminal of the MOSFET; the datasheet gives the device rating as VDS -20 V with continuous drain current ID of -5 A at TA=25℃ (page 1).
3 D passive Drain terminal of the MOSFET; the datasheet limits drain-source voltage VDS to -20 V and continuous drain current to -5 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HL
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -10 10 V 1
Continuous Drain Current, [email protected], TA=25℃ ID@TA=25℃ -5 A 10s 1
Continuous Drain Current, [email protected], TA=25℃ ID@TA=25℃ -4 A Steady state 1
Continuous Drain Current, [email protected], TA=70℃ ID@TA=70℃ -4 A 10s 1
Continuous Drain Current, [email protected], TA=70℃ ID@TA=70℃ -3.7 A Steady state 1
Pulsed Drain Current IDM -18 A 1
Total Power Dissipation, TA=25℃ PD@TA=25℃ 1.32 W 10s 1
Total Power Dissipation, TA=25℃ PD@TA=25℃ 1 W Steady state 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-ambient RθJA 95 ℃/W t≤10s 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V, VGS=0V 2
Gate to Body Leakage Current IGSS -10 10 μA VDS=0V, VGS=±10V 2
Gate Threshold Voltage Vgs(th) -0.4 -0.7 -1 V VDS=VGS, Id=-250μA 2
Static Drain to Source On-State Resistance Rds(on) 29 40 mΩ VGS=-4.5V, ID=-4A 2
Static Drain to Source On-State Resistance Rds(on) 40 56 mΩ VGS=-2.5V, ID=-3A 2
Continuous Diode Forward Current Is -4.1 A 2
Continuous Diode Pulse Current Ism -16.4 A 2
Drain to Source Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-4.1A 2

CAD (KiCad official)

  • Symbol: 3415E
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 3415e-etched.step / 3415e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3415e.step / 3415e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (6 pp, sha256 4f2accc72555d14f, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF